SiC N-Channel MOSFETs Deliver Many Benefits
MCC is pleased to roll out its new 1200V SiC N-Channel power MOSFETs, SICW080N120Y-BP and SICW080N120Y4. These innovative Silicon Carbide (SiC) MOSFETs are available in a TO-247-3 package and TO-247-4 package. They provide reliable performance with higher-speed switching frequencies and high blocking voltage with low on-resistance and better avalanche ruggedness.
Ideal for industrial applications, SICW080N120Y-BP and SICW080N120Y4 use SiC technology to provide twice the electron saturation velocity and ten times the dielectric breakdown field strength to deliver a high-powered component in a small package.
SICW080N120Y
SICW080N120Y4
Features & Benefits:
- SiC MOSFET technology
- High blocking voltage with low RDS(on)
- High-speed switching with low capacitances
- Avalanche capability
- Halogen-free, “green” device
- Epoxy meets UL 94 V-0 Flammability Rating
- Lead-free finish/RoHS compliant
MCC's new 1200V Silicon Carbide MOSFETs are fast, rugged, and capable
1200V SiC N-Channel MOSFET
1
High Thermal Conductivity
SiC has a thermal conductivity that is nearly two times higher than silicon, which allows for better heat dissipation and a higher power handing capacity.
1200V SiC N-Channel MOSFET
2
High Breakdown Voltage
10 times higher breakdown voltage than their silicon counterparts, allowing for greater voltage handing capability.
1200V SiC N-Channel MOSFET
3
Higher Switching Control
2-3 times higher electron drift velocity compared with silicon, allowing faster switching speeds and reducing switching losses.
1200V SiC N-Channel MOSFET
4
High Bandgap Energy
SiC products have 3 times more energy Bandgap, being capable of withstanding higher temperatures since they are less susceptible to temperature increase.
Specifications:
- 1200V Drain-Source Voltage (VDS)
- -8V/22V Gate-Source Voltage (VGSmax)
- -4V/18V Gate-Source Voltage (VGSop)
- 38A continuous Drain Current (ID) [SICW080N120Y-BP] / 39A continuous Drain Current (ID) [SICW080N120Y4]
- 80A Pulsed Drain Current (IDM)
- 220W total power dissipation at 25°C (TC) [SICW080N120Y-BP]/ 223W total power dissipation at 25°C (TC) [SICW080N120Y4]
- 94W total power dissipation at 110°C (TC) [SICW080N120Y-BP]/ 97W total power dissipation at 110°C (TC) [SICW080N120Y4]
- -55°C to 175°C operating and storage temperature range
- 0.68°C /W junction to case thermal resistance
Applications:
Battery Charging | Industrial | Renewables |
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Typical Applications:
One-Phase Full Bridge PFC (Unidirectional) + Full-Wave LLC DC/DC Converters: |
This AC/DC converter can be used for Consumer and Industrial applications, such as streetlights, laptops and cell phone chargers, fan and motor controllers, etc. This is a unidirectional SMPS. |
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Three-Phase 2-Level Full-Bridge PFC (Bidirectional) + Half-Bridge LLC DC/DC Converters: |
This AC/DC converter can be used on EV charging stations, on-board chargers, inverters (wind turbines and solar panels). This is a bidirectional SMPS. |
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Three-Phase 3-level Vienna PFC (Unidirectional): |
This is one of the various topologies used for high-power three-phase power factor corrections (PFC) applications. This topology provides low THD of the input grid. |
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Three-Phase High-Voltage, High-Power Motor Control (Single Phase PWM Rectifier + Three-Phase PWM Inverter): |
High-power applications require regulating and controlling inductive system loads to avoid power loss, dephasing of AC lines, and increased energy bills a sudden power surge could create. A frequency inverter, like the one in the schematic, is necessary to prevent this from happening. |
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Parametrics, Datasheets & ECAD file:
Product |
Type | Package |
Drain-source Voltage (VDS) |
Gate Source Voltage (VGSmax) | RDS(ON) Max |
Continuous Drain Current (ID) |
Datasheet |
SICW080N120Y-BP | SiC MOSFETs | TO-247-3 | 1200V | -8V/ +22V | 0.085 | 38A | Datasheet |
SICW080N120Y4 | SiC MOSFETs | TO-247-4 | 1200V | -8V/ +22V | 0.085 | 39A | Datasheet |
The SICW080N120Y-BP ECAD file is also available to aid in product design.
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