---
title: Elevate Efficiency with MCC’s New Advanced 1200V SiC MOSFET
description: MCC’s new 1200V SiC MOSFET delivers impressive low-on resistance and a TO-247-4 package with a Kelvin source pin for enhanced switching and efficiency.
image: https://solutions.mccsemi.com/hubfs/Elevate%20Efficiency%20with%20MCC%E2%80%99s%20New%20Advanced%201200V%20SiC%20MOSFET%20%20MCC%20semi%20micro%20commercial%20components%201080x400.png
---
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# Elevate Efficiency with MCC’s New Advanced 1200V SiC MOSFET
# Elevate Efficiency with MCC’s New Advanced 1200V SiC MOSFET
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
by [MCC](https://solutions.mccsemi.com/news/author/mcc)
February 12, 2024
## Win With Low On-Resistance in a TO-247-4 Package with Kelvin Source Pin
We’re pleased to introduce our latest high-performance component — our 1200V SiC N-channel MOSFET. With an impressively low on-resistance of just 28mΩ at a gate-source voltage of 18V, **[SICW028N120A4-BP](https://www.mccsemi.com/products/silicon-carbide-sic/sic-mosfets/SICW028N120A4)** is engineered to deliver in demanding high-power applications.
Housed in a TO-247-4 package, this MOSFET works well with the popular D2PAK 4-pin footprint and includes a Kelvin source pin for significant reduction in switching losses and a boost in energy efficiency.
A high operating junction temperature of up to +175°C and excellent thermal stability ensure our new SiC MOSFET will revolutionize power management in a diverse range of industrial and commercial devices that must perform in harsh conditions.
MCC is your total solutions partner for advanced discrete semiconductors that help our world become more connected without compromising quality. And our new SiC MOSFET is the perfect component for the job.
[SICW028N120A4-BP](https://www.mccsemi.com/products/silicon-carbide-sic/sic-mosfets/SICW028N120A4)
##### Features & Benefits:
- 1200V blocking voltage capability
- 28mΩ low on-resistance
- Kelvin source pin for enhanced switching
- Avalanche ruggedness for durability
- Excellent thermal stability
- High operating junction temperature range (+175°C)
- D2PAK-compatible 4-pin TO-247-4 package
[Download Flyer](https://solutions.mccsemi.com/hubfs/Elevate%20Efficiency%20with%20MCC%E2%80%99s%20New%20Advanced%201200V%20SiC%20MOSFET%20-%20mcc%20semi%20-%20micro%20commercial%20components.pdf)
## Product Highlights
MCC Semi’s 1200V SiC MOSFET boasts outstanding efficiency and performance, which translates to cost savings in more ways than one. Excellent thermal management eliminates the need for bulky cooling systems, further increasing reliability while reducing space required on the footprint.
And the 4-pin package ensures high-power handling in tight spaces, empowering designers to create sleeker products that don’t skimp on reliability. This advanced component is consistent when and where it matters most.
1200V, 80A N-Channel SiC
MOSFET
### 1
###### Enhanced Energy Efficiency
With on-resistance of only 28mΩ, this SiC MOSFET dramatically reduces conduction losses, improving the system's overall efficiency in high-power applications.
1200V 28mΩ SiC
MOSFET
### 2
###### Improved Thermal Management
Our MOSFET’s superior thermal performance ensures efficient heat management, eliminating the need for additional cooling components while increasing product reliability and lifespan.
1200V 28mΩ SiC
MOSFET
### 3
###### Increased Power Density
The 4-pin TO-247-4 package is compatible with the compact D2PAK footprint, enabling high-power handling in power electronics designs where space is limited.
1200V 28mΩ SiC
MOSFET
### 4
###### Reliability in Harsh Conditions
With its high avalanche ruggedness and ability to operate at high junction temperatures of +175°C, our MOSFET guarantees uninterrupted operation in harsh environments.
## Applications
Our 1200V SiC MOSFET is the robust and reliable solution for a host of industrial and commercial applications where high-voltage and harsh conditions are part of the job, including:
|  |  |  |
| --- | --- | --- |
| Industrial | Renewable Energy | Computing |
| - Motor drives - Industrial power supplies - Welding equipment - High-voltage DC-DC converters - Battery chargers | - Solar inverters - Energy storage systems (ESS) | - High-efficiency power supplies for data center - Uninterruptible power supply (UPS) systems |
## Product Attributes, Parametrics & Datasheet
| **Product** | **Type** | **Package** | Drain-Source Voltage (VDS) | Continuous Drain Current (ID) | On-Resistance RDS(ON) Max. | **Datasheet** |
| --- | --- | --- | --- | --- | --- | --- |
| [SICW028N120A4-BP](https://www.mccsemi.com/products/silicon-carbide-sic/sic-mosfets/SICW028N120A4) | SiC MOSFET | TO-247-4 | 1200V | 80A | 28mΩ | [Info](https://www.mccsemi.com/pdf/Products/SICW028N120A4(TO-247-4).pdf) |
Use the [MCC website chatbot](https://solutions.mccsemi.com/news/elevate-efficiency-with-mccs-new-advanced-1200v-sic-mosfet#hs-chat-open) to quickly request a sample or ask a question.
###### Tags:
[New Product Introductions,](https://solutions.mccsemi.com/news/tag/new-product-introductions) [News,](https://solutions.mccsemi.com/news/tag/news) [Industrial,](https://solutions.mccsemi.com/news/tag/industrial) [Computing,](https://solutions.mccsemi.com/news/tag/computing) [Silicon Carbide,](https://solutions.mccsemi.com/news/tag/silicon-carbide) [MOSFETs](https://solutions.mccsemi.com/news/tag/mosfets)
#### Related Content
[](https://solutions.mccsemi.com/news/mcc-introduces-high-efficiency-1200v-gen4-sic-schottky-diodes-for-automotive-power-systems)
February 24, 2026
#### [MCC Introduces High-Efficiency 1200V Gen4 SiC Schottky Diodes for Automotive Power Systems](https://solutions.mccsemi.com/news/mcc-introduces-high-efficiency-1200v-gen4-sic-schottky-diodes-for-automotive-power-systems)
[](https://solutions.mccsemi.com/news/unlock-high-frequency-efficiency-with-mccs-advanced-1200v-sic-diode)
November 10, 2025
#### [Unlock High-Frequency Efficiency with MCC’s Advanced 1200V SiC Schottky Barrier Rectifier](https://solutions.mccsemi.com/news/unlock-high-frequency-efficiency-with-mccs-advanced-1200v-sic-diode)
[](https://solutions.mccsemi.com/news/high-efficiency-power-conversion-with-mccs-1200v-30a-sic-schottky-barrier-diode)
August 6, 2026
#### [High-Efficiency Power Conversion with MCC's 1200V 30A SiC Schottky Barrier Diode](https://solutions.mccsemi.com/news/high-efficiency-power-conversion-with-mccs-1200v-30a-sic-schottky-barrier-diode)
[](https://solutions.mccsemi.com/news/mcc-introduces-650v-1200v-gen4-sic-schottky-barrier-rectifiers)
March 25, 2026
#### [MCC Introduces 650V–1200V Gen4 SiC Schottky Barrier Rectifiers](https://solutions.mccsemi.com/news/mcc-introduces-650v-1200v-gen4-sic-schottky-barrier-rectifiers)
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
Post by [MCC](https://solutions.mccsemi.com/news/author/mcc)
February 12, 2024
MCC is a leading integrated device manufacturer (IDM) of discrete semiconductors worldwide. Headquartered in the US, we deliver supply chain assurance, best-in-class support, and a diverse portfolio of 10,000+ advanced components to help customers innovate in automotive, industrial, and beyond.
#### Global Headquarters
130 W Cochran St, Unit B
Simi Valley, CA. 93065
[818.701.4933](tel:%20818.701.4933)
---
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