.png?width=50&height=50&name=mcc%20150x150%20(1).png)
Win With Low On-Resistance in a TO-247-4 Package with Kelvin Source Pin
We’re pleased to introduce our latest high-performance component — our 1200V SiC N-channel MOSFET. With an impressively low on-resistance of just 28mΩ at a gate-source voltage of 18V, SICW028N120A4-BP is engineered to deliver in demanding high-power applications.
Housed in a TO-247-4 package, this MOSFET works well with the popular D2PAK 4-pin footprint and includes a Kelvin source pin for significant reduction in switching losses and a boost in energy efficiency.
A high operating junction temperature of up to +175°C and excellent thermal stability ensure our new SiC MOSFET will revolutionize power management in a diverse range of industrial and commercial devices that must perform in harsh conditions.
MCC is your total solutions partner for advanced discrete semiconductors that help our world become more connected without compromising quality. And our new SiC MOSFET is the perfect component for the job.
Features & Benefits:
- 1200V blocking voltage capability
- 28mΩ low on-resistance
- Kelvin source pin for enhanced switching
- Avalanche ruggedness for durability
- Excellent thermal stability
- High operating junction temperature range (+175°C)
- D2PAK-compatible 4-pin TO-247-4 package
Applications
Our 1200V SiC MOSFET is the robust and reliable solution for a host of industrial and commercial applications where high-voltage and harsh conditions are part of the job, including:
 |
|
|
| Industrial | Renewable Energy | Computing |
|
|
|
Product Attributes, Parametrics & Datasheets
|
Product |
Type |
Package |
Drain-Source Voltage (VDS) |
Continuous Drain Current (ID) |
On-Resistance RDS(ON) Max. |
Datasheet |
| SICW028N120A4-BP | SiC MOSFET | TO-247-4 | 1200V | 80A | 28mΩ | Info |
Use the MCC website chatbot to quickly request a sample or ask a question.
