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Leverage Faster Switching with Maximum Efficiency
MCC Semi is proud to unveil our 1700V SiC MOSFET, SICW400N170A-BP. Designed to elevate power conversion in a range of applications, this MOSFET features ultra-low on-resistance of only 400mΩ and high blocking voltage capability.
But the impressive features don’t stop there... Our SiC MOSFET enables high-speed switching while ensuring minimal conduction losses — essential requirements for optimizing frequency-dependent systems.
A standard, yet durable TO-247AB package delivers effective operation at a gate-source voltage of 20V with superior thermal stability and an operating junction temperature of +175°C.
This unwavering reliability in harsh conditions only adds to the component's appeal and versatility for various high-voltage applications, including EV charging stations and renewable energy systems.
Features & Benefits:
- High blocking voltage capability (1700V)
- Ultra-low on-resistance (400mΩ) enhances efficiency
- Low capacitance enables faster switching
- Excellent thermal stability
- High operating junction temperature (to +175°C)
- Standard TO-247AB package
Applications
Our high-voltage, ultra-low on-resistance SiC MOSFET is the ideal solution for applications where conditions are harsh, temperatures run hot, and component failure is not an option.
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| Industrial | Computing | Renewable Energy |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source Voltage (VDS) |
Drain- Source On-Resistance RDS(ON) |
Continuous Drain Current (ID) |
Datasheet |
| SICW400N170A-BP | SiC MOSFET | TO-247AB | 1700V | 400mΩ | 6A | Info |
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