MCC introduces new additions to its power MOSFET portfolio with the MCG052P10Y and MCAC054P10Y, high‑performance 100V P‑Channel MOSFETs designed to address the challenges of high‑current, high‑side switching. High‑voltage systems often struggle with conduction losses, complex gate drive requirements, and thermal constraints in compact designs, which can limit efficiency and reliability.

The MCG052P10Y, available in a compact DFN3333 package, and the MCAC054P10Y, offered in a higher‑power DFN5060 package, combine low Rds(on), strong current handling, and low thermal resistance to reduce power losses and simplify thermal management. Built on split gate trench MOSFET technology, these devices minimize switching losses and efficiently transfer heat to the PCB, enabling stable operation at higher power levels. With a 100V drain‑source rating, they provide a reliable and space‑efficient solution for demanding power applications.