Ultra-Low 55mΩ RDS(on) and Robust Thermal Performance in DFN5060
MCC is proud to announce the launch of the MCAC055N20YH, a cutting-edge 200V N-Channel Power MOSFET that redefines what’s possible in compact, high-efficiency power systems. As industries push toward higher power density, smaller footprints, and greater energy efficiency, MCC delivers a solution that meets these demands head-on.
The MCAC055N20YH combines robust high-voltage capability with exceptional thermal performance and ultra-low conduction losses, all packed into a space-saving DFN5060 package. Leveraging advanced Split-Gate Trench technology, this MOSFET offers designers the perfect balance of speed, efficiency, and reliability for demanding applications such as data center power supplies, telecom infrastructure, industrial automation, renewable energy systems, and professional audio equipment.
With a 200V VDS rating, 34A continuous current capability, and a low Rds(on) of just 55mΩ, the MCAC055N20YH provides generous design margin for voltage transients while minimizing heat generation and energy loss. Its 0.9°C/W junction-to-case thermal resistance ensures stable operation under heavy loads, enabling cooler, more efficient systems that last longer.
Features & Benefits:
- 200V N-Channel Power MOSFET for high-voltage industrial and telecom applications
- Advanced Split-Gate Trench MOSFET technology optimized for low on-resistance and high switching speed
- Low Rds(on) of 0.055Ω (max) at Vgs = 10V to minimize conduction losses and heat generation
- Excellent thermal performance with 0.9°C/W junction-to-case thermal resistance for efficient heat transfer and stable high-power operation
- Compact DFN5060 package with a 5 mm × 6 mm footprint, delivering high power density in space-constrained designs
- 200V drain-source voltage (VDS) rating provides ample margin for voltage spikes and ringing in demanding 48–100V systems
Product Highlights
200V N-Channel Power MOSFET
1
Higher Efficiency
Low Rds(on) of 0.055Ω (max) at Vgs = 10V and fast Split-Gate Trench switching reduce conduction and switching losses, boosting overall power-conversion efficiency.
200V N-Channel Power MOSFET
2
Improved Thermal Reliability
Low 0.9°C/W junction-to-case thermal resistance enables efficient heat transfer to the PCB or heatsink, supporting stable operation at high load currents and extended lifetimes.
200V N-Channel Power MOSFET
3
Compact, High Power Density Designs
The small DFN5060 (5 mm × 6 mm) package allows 34A capability in a very compact footprint, freeing PCB space and enabling more compact, power-dense system layouts.
200V N-Channel Power MOSFET
4
Robust Performance in Demanding Systems
A 200V VDS rating provides ample headroom for transients, spikes, and ringing in 48–100V industrial, telecom, and energy systems, improving system robustness and design margin.
Applications
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Data Center & Telecom Infrastructure |
Industrial Automation & Motion Control |
Renewable Energy & Energy Storage |
Professional Audio & Entertainment Systems |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Channel |
Drain-Source |
Gate-Source Voltage VGS (V) |
Drain |
Drain-Source |
Datasheet |
|
Power MOSFET |
N+N |
200 |
±20 |
34 |
0.055 |
Now available, purchase directly from MCC or through our authorized distributors.
MCC MOSFETs deliver reliable switching, low on-resistance, and compact footprints for industrial and automotive applications, including AEC-Q101 qualified options and efficient packages across diverse power ranges. Learn more in The Essential Guide to 40V MOSFET Functions & Features or explore our full Power MOSFET portfolio.
For technical inquiries or sample requests, contact MCC for support.







