High Current, Low Loss Switching in a Compact TOLL‑8L Package
MCC launches the MCTL011N20YH, a 200 V N-Channel MOSFET aimed at high-power designs where efficiency, thermal performance, and board space are all critical. Built on Split Gate Trench MOSFET Technology and housed in a thermally efficient TOLL‑8L package, it delivers low conduction and switching losses with low parasitic inductance, supporting fast, clean switching and stable operation up to a maximum junction temperature Tj(max) = 175 ℃.
The optimized thermal path of the TOLL‑8L package provides excellent heat dissipation, enabling higher current handling with reduced temperature rise and smaller cooling requirements. This helps engineers increase power density, hit efficiency targets, and improve long-term reliability in motor drivers, DC‑DC converters, UPS systems, and server power modules.
Features & Benefits:
- 200 V N‑Channel power MOSFET
- Split gate trench MOSFET technology for low losses and high efficiency
- TOLL‑8L surface‑mount power package
- Compact package size: TOLL‑8L
- Low parasitic inductance for fast, clean switching Excellent thermal performance and heat dissipation
- High current handling capability
- Maximum junction temperature: Tj(max) = 175 °C
- Mechanically robust package suited for harsh and industrial environments
Product Highlights
200 V N‑Channel power MOSFET
1
High Power Density:
Compact TOLL‑8L package with superior thermal performance supports higher output power in a smaller footprint, enabling more power-dense designs without sacrificing reliability.
200 V N‑Channel power MOSFET
2
Improved Efficiency
Split gate trench MOSFET technology and low parasitic inductance reduce conduction and switching losses, boosting overall system efficiency and reducing heat generation.
200 V N‑Channel power MOSFET
3
Robust Thermal Reliability
Excellent heat dissipation and a maximum junction temperature of 175 °C allow reliable operation under high thermal stress, extending system lifetime and reducing the need for over‑sized cooling solutions.
200 V N‑Channel power MOSFET
4
Fast, Clean Switching
Low inductance packaging and optimized device structure provide fast, low‑noise switching, improving EMI performance and enabling higher switching frequencies for more compact power stages.
Applications
This 100V N-Channel MOSFET is designed to meet the needs of a wide range of industries, providing reliable performance in both high-frequency and high-power scenarios. Its versatility and robust construction make it an excellent choice for the following application areas:
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Industrial Motor Control & Drives |
Power Conversion & DC-DC Systems |
Backup Power & Energy Storage (UPS) |
Data Center, Server & Telecom Power |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source |
Gate-Source |
Drain |
Drain-Source |
Datasheet |
|
Power MOSFET |
TOLL-8L |
200 |
±20 |
102 |
0.011 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.







