12 mΩ RDS(on) in a Thermally Optimized TO220AB(B) Package
High-voltage power stages often face efficiency losses and heat buildup that drive larger heatsinks and complicated designs. MCC addresses those challenges with the MCP012N20YH 200 V N-Channel MOSFET built on Split Gate Trench (SGT) technology and housed in a thermally optimized TO220AB(B) package. It offers a low 12 mΩ RDS(on) and fast switching to reduce conduction and switching losses, while its package and industry standard footprint enable reliable operation up to 175°C and streamlined drop-in integration.
The enhanced thermal path supports higher current handling with lower temperature rise, helping designers boost power density, meet efficiency targets, and improve system reliability across motor drives, DCDC converters, base station power amplifiers, and industrial power stages.
Features & Benefits:
- Split Gate Trench (SGT) power MOSFET technology
- Low RDS(on): 12 mΩ (typ)
- High junction temperature: ≤175°C
- Fast switching characteristics
- Strong avalanche/robust SOA (application dependent)
- Low conduction losses for higher efficiency
- Industry standard TO220AB(B) footprint for easy design-in, with optimization for heat dissipation
Product Highlights
200V N-Channel MOSFET in TO-220AB(B) Package
1
Efficiency gains
12 mΩ RDS(on) and fast switching cut conduction and switching losses, improving power conversion efficiency and reducing heat.
200V N-Channel MOSFET in TO-220AB(B) Package
2
Thermal resilience
The TO220AB(B) package is optimized for heat flow, supporting reliable operation up to 175°C and lowering temperature rises under load.
200V N-Channel MOSFET in TO-220AB(B) Package
3
Design simplicity
An industry standard footprint and pinout enable easy drop-in replacement, faster PCB layout, and straightforward retrofits.
200V N-Channel MOSFET in TO-220AB(B) Package
4
Operational robustness
SGT architecture and strong avalanche capability deliver stable performance in demanding applications such as motor drives, DCDC converters, and industrial power stages.
Applications
The MCP012N20YH-BP’s combination of low RDS(on), fast switching, and a thermally optimized TO220AB(B) package makes it a strong fit for high-voltage, high reliability power stages. Its industry standard footprint and robust performance enable straightforward integration across a wide range of sectors and use cases.
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Industrial and Automation |
Power Conversion |
Telecommunications and Infrastructure |
Energy and Utilities |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source |
Gate-Source |
Datasheet |
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Power MOSFET |
200 |
±20 |
Now available, purchase directly from MCC or through our authorized distributors.
MCC MOSFETs deliver reliable switching, low on-resistance, and compact footprints for industrial and automotive applications, including AEC-Q101 qualified options and efficient packages across diverse power ranges.
Learn more in The Essential Guide to 40V MOSFET Functions & Features or explore our full portfolio at MCC MOSFET Products.
For technical inquiries or sample requests, contact MCC for support.







