Introducing the MCC 100V N-Channel MOSFET (MCP2D5N10Y) in a robust TO-220AB(B) package, engineered for exceptional performance in demanding power applications. Leveraging advanced Split Gate Trench (SGT) technology, this MOSFET delivers enhanced dynamic performance, reduced gate charge, and reliable operation at junction temperatures up to 175°C. Designed with an optimized industry-standard footprint, this device ensures efficient heat dissipation, making it ideal for high-frequency circuits and power conversion systems. 

Power management and conversion systems often struggle with excess heat, energy loss, and inconsistent operation under heavy loads. The MCC 100V N-Channel MOSFET solves these challenges by combining advanced trench technology and a low gate charge design, which work together to reduce switching losses and increase overall efficiency. It's optimized TO-220AB(B) package is designed for excellent thermal performance, maintaining stability at high junction temperatures and enabling long-term reliability. With its standard footprint, this N-Channel MOSFET allows for easy integration into a wide range of designs, supporting engineers in building compact, durable, and energy-efficient solutions that deliver dependable performance—even in the toughest environments.