MCC proudly introduces the MCP2D0N04YL-BP, a 40V N-channel MOSFET designed to deliver outstanding performance in demanding power applications. Leveraging advanced Split Gate Trench (SGT) technology, this device offers lower gate charge, fast switching speeds, and robust thermal management for applications that require efficiency and reliability. The TO-220AB(H) package is engineered for optimal heat dissipation, allowing the MOSFET to maintain an operating junction temperature ≤150°C while ensuring compatibility with industry-standard footprints. 

This MOSFET provides high efficiency for power conversion systems and is ideal for high-frequency operation. The improved dynamic characteristics and thermal capabilities make it a solid choice for engineers seeking dependable solutions in power management. 

The MCP2D0N04YL-BP incorporates advanced Split Gate Trench (SGT) technology, resulting in lower gate charge and reduced switching losses for higher overall efficiency. Its fast switching capabilities make it well-suited for circuits where quick response times are critical, while the robust TO-220AB(H) package provides superior heat dissipation to maintain performance under demanding conditions. With a maximum operating junction temperature of 150°C and an industry-standard footprint, this MOSFET ensures reliable operation and easy integration into a wide range of power management designs.