Low RDS(on) and High Current Capability for Next‑Generation Power Designs
Micro Commercial Components (MCC) introduces the MCGXDXN04YX series, a family of high‑efficiency 40V N‑Channel MOSFETs designed to meet the growing demand for compact, high‑performance power solutions. Power systems today are increasingly constrained by board space while requiring higher current capability and improved efficiency, creating challenges in thermal management and switching performance.
The MCGXDXN04YX series, available in the compact PDFN3333 package, addresses these challenges by combining ultra‑low RDS(on) values of 4.5mΩ, 5.8mΩ, and 8.2mΩ with continuous drain current capability up to 80A. Built on Split Gate Trench (SGT) MOSFET technology, these devices reduce switching losses while maintaining excellent thermal performance. With logic‑level gate drive compatibility and optimized characteristics, the series delivers reliable, high‑efficiency operation across a wide range of power applications
40V N-Channel MOSFET
Features & Benefits:
- Low RDS(on): As low as 4.5mΩ at VGS = 10V minimizes conduction losses and improves efficiency
- Split Gate Trench Technology: Enables reduced switching losses and enhanced performance in high‑frequency operation
- High Current Capability: Supports continuous drain current of 45A, 70A and 80A for high‑power applications
- Compact Package: PDFN3333 footprint allows higher power density and space optimization
- Low Thermal Resistance: Below 4°C/W junction‑to‑case enables efficient heat dissipation and stable operation
- Logic‑Level Gate Drive: Simplifies system design and improves compatibility with control ICs
- 40V VDS Rating: Suitable for DC/DC converters, load switching, and mid‑voltage systems
Product Highlights
40V N‑Channel MOSFET
1
High Power Density in Compact Design
The compact PDFN3333 MOSFET package enables high current capability up to 80A while minimizing PCB footprint, making it ideal for space‑constrained power designs, DC/DC converters, and load switching applications
40V N‑Channel MOSFET
2
Ultra‑Low RDS(on) for Reduced Conduction Losses
With RDS(on) as low as 4.5mΩ, this 40V N‑channel MOSFET minimizes conduction losses, improving system efficiency and thermal performance in high-efficiency power designs and synchronous rectification applications
40V N‑Channel MOSFET
3
Low Gate Charge (Qg) for Fast Switching Efficiency
Optimized low gate charge (Qg) reduces switching losses and improves performance in high-frequency switching applications. This enables better efficiency and lower driver power requirements
40V N‑Channel MOSFET
4
Enhanced Thermal Performance for Reliable Operation
Low junction‑to‑case thermal resistance (<4°C/W) enables efficient heat dissipation, ensuring stable operation under high current and high power conditions, even in compact layouts
Applications
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Data Center and Networking Infrastructure
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Energy & Power Management
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Industrial Systems
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Power Conversion
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Consumer Electronics
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Motor Control
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Channel |
Drain-Source |
Gate-Source |
Drain-Source |
Datasheet |
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N |
40 |
±20 |
0.0045 |
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N |
40
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±20 |
0.0058 |
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N |
40 |
±20
|
0.0082 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.







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