AEC-Q101 Qualified 40V Power MOSFET Featuring 350A Current Capability, Advanced Split Gate Trench Technology, and Compact DFN5060-C Packaging
Micro Commercial Components (MCC) introduces the MCACLD70N04YHE3-TP, an AEC-Q101 qualified 40V N-channel power MOSFET engineered for demanding automotive and high-current power applications. As modern electric vehicles, battery management systems, and power distribution architectures continue to demand higher efficiency within increasingly compact designs, engineers require MOSFETs that minimize power losses while delivering exceptional current capability and thermal performance.
The MCACLD70N04YHE3-TP addresses these requirements by combining an ultra-low 0.7mΩ maximum RDS(on) with an impressive 350A continuous drain current in a compact DFN5060-C package. Built on advanced Split Gate Trench (SGT) MOSFET technology, the device minimizes both conduction and switching losses while providing excellent heat dissipation through an ultra-low junction-to-case thermal resistance of only 0.4°C/W. These characteristics make it an ideal solution for battery management systems, DC-DC converters, power distribution modules, motor drives, load switches, and other high-current automotive power applications.
40V Automotive N-Channel MOSFET
Features & Benefits:
- AEC-Q101 Qualified: Meets stringent automotive reliability requirements for demanding electrical, thermal, and mechanical operating conditions
- Ultra-Low RDS(on): Maximum 0.7mΩ at VGS = 10V minimizes conduction losses and maximizes overall power efficiency
- High Current Capability: Supports continuous drain current up to 350A, enabling high-power automotive and industrial applications
- Split Gate Trench (SGT) Technology: Reduces switching losses while maintaining ultra-low on-resistance for improved high-frequency performance
- Superior Thermal Performance: Ultra-low junction-to-case thermal resistance of only 0.4°C/W enables efficient heat dissipation under heavy load
- Compact DFN5060-C Package: Supports high power density while reducing PCB footprint
- 40V Drain-Source Voltage: Optimized for 12V and 24V automotive power architectures
Product Highlights
40V Automotive N‑Channel MOSFET
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Ultra-Low RDS(on) for Maximum Efficiency
With an ultra-low 0.7mΩ RDS(on), the MCACLD70N04YHE3-TP minimizes conduction losses, improving power efficiency while reducing heat generation in high-current switching applications
40V Automotive N‑Channel MOSFET
2
High Current Capability
Supporting continuous drain current up to 350A, the device delivers reliable performance for battery management systems, DC-DC converters, and other demanding automotive power applications
40V Automotive N‑Channel MOSFET
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Superior Thermal Performance
The DFN5060-C package features an ultra-low 0.4°C/W junction-to-case thermal resistance, enabling efficient heat dissipation and reliable operation under high-current, high-power conditions
40V Automotive N‑Channel MOSFET
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Automotive-Grade Reliability
AEC-Q101 qualification and advanced Split Gate Trench (SGT) technology ensure reliable operation, making the device well suited for demanding automotive and industrial power applications
Applications
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Energy & Power Management
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Industrial Systems
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Electric Vehicle
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Power Conversion
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Motor Control
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Continuous Drain Current ID @25°C (A) | Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Datasheet |
| MCACLD70N04YHE3-TP | DFN5060-C | N |
40 |
±20 |
350 |
0.0007 |
Now available, purchase directly from MCC or through our authorized distributors.
To learn more about selecting and applying 40V MOSFETs, explore our Essential Guide to 40V MOSFET Functions and Features for expert insights into key specifications, design considerations, and application best practices.
For technical inquiries or sample requests, contact MCC for support.






