Crucial components across a diverse range of applications, 40V MOSFETs are particularly useful in automotive systems and power management solutions. These versatile devices play key roles in motor drives, DC-DC converters, and battery management systems, enabling efficient operation and reliable performance.
What sets 40V MOSFETs apart? Their ability to manage moderate voltage levels while delivering low on-resistance and high-current capacity — a combination that makes them indispensable for engineers seeking optimal solutions for efficiency and stability.
This guide will explore the fundamental principles behind MOSFETs and their various types and classifications, highlighting the specific advantages of 40V components in modern electronics.
The term MOSFET stands for metal-oxide-semiconductor field-effect transistor. Serving primarily as switching devices or amplifiers, these components are a must for electronic circuits. Unlike bipolar junction transistors, a MOSFET's channel width or amplification gain is controlled by gate-to-source voltage rather than current. This feature enhances efficiency and reliability, making them integral to various applications.
A MOSFET operates by using an electric field to control the flow of current. It has three primary terminals: gate, drain, and source. The voltage applied to the gate terminal regulates the conductivity between the drain and source terminals, which either permits or blocks the flow of current.
Understanding MOSFET voltage classifications is essential for ensuring safety, efficiency, and optimal performance. The three main categories of voltage ranges for MOSFETs are:
Classification | Voltage | Technologies |
---|---|---|
LV Low Voltage |
12V ~ 30V | Trench |
MV Medium Voltage |
40V ~ 200V | Trench, SGT |
HV High Voltage |
> 400V | Super Junction |
Working knowledge of these classifications leads to better decision-making when specifying the right MOSFETs for electronic devices and systems.
While they sound similar, trench and split-gate trench MOSFET technologies each have unique characteristics and benefits, making them suitable for various applications. Applying this knowledge is essential to selecting the right MOSFET for an application.
Here’s a closer look at these technologies:
Definition and Working Principle: Trench MOSFETs are characterized by their vertical structure, with the gate embedded in the silicon to form a “trench.” This design significantly reduces on-resistance and enhances current capacity, allowing for a more efficient flow of electricity.
Advantages:
Applications: Trench MOSFETs are widely used in low-voltage power supplies, automotive systems, small-signal conversion, and other applications that require effective power management and conversion.
Definition and Working Principle: Split-gate trench MOSFETs feature a gate structure embedded deep within the epitaxial layer of silicon. By increasing the electric field area, this configuration enhances breakdown voltage and reduces gate charge.
Advantages:
Applications: Ideal for high-frequency applications where rapid switching is crucial, such as advanced power supplies and high-speed communication devices.
Additional Benefits of Split-Gate Trench Design: Beyond enhanced performance, the split-gate trench design allows for a smaller die size, which lowers manufacturing costs and supports more compact device designs. This makes them particularly valuable in applications that require both efficiency and space savings.
Trench and split-gate trench technologies each have benefits that could make them best suited for the project at hand, so knowing when to use each is beneficial to optimal outcomes.
Because MOSFETs — particularly the 40V options — are essential in modern electronics, MCC offers a comprehensive portfolio with over 75 products available. Our 40V MOSFET lineup includes both automotive and non-automotive components, ensuring versatility and efficiency across various sectors and applications.
MCC’s entire MOSFET selection includes more than 600 devices, with over 400 power MOSFETs and over 200 small signal MOSFETs. We offer several configurations to support diverse needs, such as single N-channel, single P-channel, dual N-channel, dual P-channel, and N+P channel.
MCC offers a wide range of packaging options to accommodate various design requirements. Each package type is tailored for specific applications, ensuring optimal performance and reliable operation. The different types of MOSFET packages available include:
When selecting a MOSFET package, factors such as application environment, thermal management needs, current ratings, and board space constraints should be considered. Each package type offers distinct advantages that can significantly impact the performance of electronic designs.
Understanding the features and suitability of each packaging option enables more informed decisions that align with project requirements.
Dual-side cooling (DSC) technology represents a significant advancement in MOSFET packaging, particularly for DFN5060 models, commonly referred to as DFN 5x6. This advanced package technology enhances thermal efficiency and current carrying stability, making it ideal for high-power applications.
MCC offers double-sided cooling packages in the compact DFN5x6 form factor. Available in two variants with similar RDS(on) values of 1.1 milliohms, these devices differ in current carrying capacity based on die size. This flexibility allows engineers to choose the most suitable option for their application needs.
One key advantage of DFN5060 dual-side cooling over traditional bottom-cooling designs is superior heat dissipation. Its superior thermal performance has been proven in tests, where the dual-side cooling design showed a temperature rise nearly 20℃ lower than its bottom-cooling counterpart, the traditional DFN5060, at an ambient temperature of approximately 20.5℃ with a current draw of 15 amperes over three hours. Learn more about the DSC DFN5060 comparison with traditional DFN5060 packages in this informative webinar.
Improved thermal management not only enhances MOSFET performance but also increases reliability in demanding environments. By maintaining lower operating temperatures, devices can deliver higher currents without compromising integrity. Therefore, DFN 5x6 double-sides packages are an excellent choice for applications requiring high efficiency and robust performance under heavy loads.
By integrating dual-side cooling technology within the DFN5060 package, designers can optimize system performance while minimizing overheating risks.
Modern vehicles are becoming increasingly sophisticated, incorporating advanced safety features that add complexity. Among the key components driving this innovation are MOSFETs, which play a crucial role in various automotive applications. They are extensively utilized for functions such as electric oil pumps, water pumps, power steering, and power seats. Additionally, MOSFETs are vital in DC-DC converters and battery management systems, ensuring efficient power distribution and management within 12V vehicle systems.
A notable example is the Automotive-Grade DFN5060 MOSFET, which features dual-side cooling to enhance performance and reliability in demanding automotive environments.
In non-automotive sectors, 40V MOSFETs are well-suited for applications in power tools, DC fans, home appliances, battery management systems (BMS), and DC-DC converters. Helping in switching control and protection tasks, they guarantee stability and efficiency across various devices and systems.
Part Number | MCACL 280N04YHE3 |
MCAC 180N04YHE3 |
MCAC 120N04YHE3 |
MCAC 95N04YHE3 |
MCAC 88N04YHE3 |
MCACD 60N04YHE3 |
---|---|---|---|---|---|---|
Configuration | N | N | N | N | N | N+N |
RDS(ON) (mΩ) (Typ.) (Max.) | 0.6 0.8 |
1.50 2.00 |
2.40 3.10 |
2.40 3.20 |
3.50 4.50 |
4.20 5.50 |
VGS(th) (V) (min. - max.) (typ.) | 2.0 – 4.0 2.8 |
2.0 – 4.0 3.1 |
2.0 – 4.0 3.1 |
2.0 – 4.0 2.8 |
2.0 – 4.0 2.8 |
2.0 – 4.0 3.1 |
ID @25ºC (A) | 280 | 180 | 120 | 95 | 88 | 60 |
QG (nC) typ. | 79 | 56 | 38 | 27.7 | 15.6 | 15.6 |
TJ (ºC) | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 |
Part Number | MCACL 320N04YQ | MCACL 330N04YHE3 | MCACL 220N04YHE3 | MCAC 130N04YHE3 | MCAC 125N04YHE3 | MCAC 85N04YHE3 | MCAC 75N04YHE3 | MCACD 55N04YHE3 |
---|---|---|---|---|---|---|---|---|
Configuration | N | N | N | N | N | N | N | N+N |
RDS(ON) (mΩ) (Typ.) (Max.) | 0.85 1.10 |
0.80 1.00 |
0.95 1.30 |
1.50 1.75 |
2.00 2.60 |
4.30 6.00 |
5.20 6.80 |
6.50 8.50 |
VGS(th) (V) (min. - max.) (typ.) | 2.0 – 3.0 2.5 |
2.0 – 4.0 2.8 |
1.0 – 2.5 1.7 |
1.2 – 2.5 1.7 |
2.0 – 4.0 3.0 |
2.0 – 4.0 3.0 |
2.0 – 4.0 3.0 |
2.0 – 4.0 3.0 |
ID @25ºC (A) | 320 | 330 | 220 | 130 | 125 | 85 | 75 | 55 |
QG (nC) typ. | 88 | 133 | 131 | 129 | 42 | 19 | 13 | 13 |
TJ (ºC) | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 |
Part Number | MCGWF 45P04HE3 |
MCGWF 60N04YHE3 |
---|---|---|
Configuration | P | N |
VDS (V) | 40 | 40 |
RDS(ON) (mΩ) (Typ.) (Max.) | 10 13 |
3.00 3.90 |
VGS(th) (V) (min. - max.) (typ.) | 1.0 – 3.0 1.6 |
2.0 – 4.0 3.0 |
ID(A) @25ºC | 45 | 60 |
QG (nC) typ. | 73.4 | 38 |
TJ (ºC) | -55 to +150 | -55 to +175 |
Part Number | MCTL 320N04YQ |
MCTL 270N04YHE3 |
---|---|---|
Configuration | N | N |
VDS (V) | 40 | 40 |
RDS(ON) (mΩ) (Typ.) (Max.) | 0.80 1.10 |
1.00 1.30 |
VGS(th) (V) (min. - max.) (typ.) | 2.0 – 3.0 2.5 |
2.0 – 4.0 3.0 |
ID(A) @25ºC | 320 | 270 |
QG (nC) typ. | 88 | 135.6 |
TJ (ºC) | -55 to +175 | -55 to +175 |
MCACLS290N04YHE3 | MCACLS330N04YHE3 | |
---|---|---|
VDS | 40V | 40V |
RDS(on) @ VGS=10V |
typ. 0.85mΩ max. 1.10mΩ |
typ. 0.83mΩ max. 1.10mΩ |
Qg | typ. 79nC | typ. 115.9nC |
VGS | ±20V | ±20V |
VGS(th) | min. 2.0V typ. 2.8V max. 4.0V |
min. 2.0V typ. 2.6V max. 4.0V |
ID | @ TC=25ºC 290A @ TC=100ºC 205A |
@ TC=25ºC 330A @ TC=100ºC 233A |
TJ | -55ºC to +175ºC | -55ºC to +175ºC |
Package | DFN5060-DSC | DFN5060-DSC |
Dimension | max. 5.30 x 6.70 x 0.76mm | max. 5.30 x 6.70 x 0.76mm |
Part Number | MCU 45P04B |
MCB 220N04Y |
MCBS 220N04Y |
MCG 50N04 |
MCACL 330N04Y |
MCTL 270N04Y |
---|---|---|---|---|---|---|
Configuration | P | N | N | N | N | N |
RDS(ON) (mΩ) (Typ.) (Max.) | 11 14 |
1.20 1.50 |
0.85 1.10 |
3.3 4.0 |
0.65 0.85 |
1.00 1.30 |
VGS(th) (V) (min. - max.) (typ.) | -1.0 – -2.3 -1.5 |
2.0 – 4.0 3.1 |
2.5 – 4.5 3.1 |
1.0 – 2.5 1.5 |
2.0 – 4.0 3.2 |
2.0 – 4.0 3.0 |
ID @25ºC (A) | -45 | 220 | 220 | 50 | 330 | 270 |
QG (nC) typ. | 58 | 136 | 132 | 102 | 133 | 15.6 |
TJ (ºC) | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +150 | -55 to +175 | -55 to +175 |
Package | DPAK | D2-PAK | TO-263-7 | DFN3333 | DFN5060-C | TOLL-8L |
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