Compact DFN5060 Package for High-Current, Space-Constrained Power Designs
MCC introduces a 40V N-channel MOSFET (MCAC2D6N04Y) in a compact DFN5060 package, engineered for designs where efficiency, power density, and board space are equally critical. Featuring an ultra-low RDS(on) of 2.6 mΩ (VGS = 10 V) and a high 166 A continuous drain current rating, this device minimizes conduction losses and heat generation, allowing designers to deliver more power in a smaller footprint while easing thermal design. Its combination of very low on-resistance, fast and efficient switching, and small package size makes it an ideal solution for battery protection circuits, compact DC-DC converters, motor drive stages, and other space-constrained power systems.
With its Split Gate Trench structure delivering low gate charge (Qg = 38.3 nC) and fast switching, the MCAC2D6N04Y-TP is well suited for high-frequency power stages where switching losses and EMI must be tightly controlled. The device’s 175 °C maximum junction temperature provides solid headroom for demanding load conditions, reducing the need for heavy heatsinking and lowering overall thermal overhead.
Features & Benefits:
- Ultra-low RDS(on) of 2.6 mΩ (max) at VGS =10V, minimizing conduction losses to extend battery life and boost overall system efficiency
- Split Gate Trench technology optimized for low gate charge (Qg = 38.3 nC) and high switching speed, enabling efficient
- High continuous drain current (ID) rating of 166 A, delivering robust power handling in demanding power designs
- High maximum junction temperature of 175 °C, improving device ruggedness and relaxing cooling and thermal management requirements
- Compact DFN5060 package (5.0 mm × 6.0 mm), reducing board space while supporting high power density layouts
- RoHS compliant and halogen-free, meeting global environmental and regulatory standards
Product Highlights
40 V N-Channel MOSFET
1
High Power Density in Limited Space
Ultra-low RDS(on) of 2.6 mΩ and a compact 5.0 mm × 6.0 mm DFN5060 package support higher current handling in a small footprint, enabling more power-dense and space-efficient designs.
40 V N-Channel MOSFET
2
Improved System and Thermal Performance
Low conduction losses and the ability to operate up to 175 °C help reduce heat generation and cooling requirements, simplifying thermal management and potentially lowering system cost
40 V N-Channel MOSFET
3
Fast, Efficient Switching
Split Gate Trench technology with low gate charge (Qg = 38.3 nC) supports high switching frequencies, reducing switching losses and allowing smaller passive components in DC-DC converters and power stages.
40 V N-Channel MOSFET
4
Robust, Reliable Operation and Compliance
A high continuous drain current rating of 166 A provides strong margin for demanding loads, while RoHS-compliant, halogen-free construction helps meet global environmental and regulatory requirements.
Applications
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Power Tools & Energy Storage |
Telecom, Networking & Data Infrastructure |
Industrial & Motor Control |
Power Management, ORing & Load Switching |
Consumer, Computing & Embedded Systems |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source |
Drain |
Drain-Source |
Datasheet |
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Power MOSFET |
40 |
166 |
0.0026 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.
For a deeper dive into MOSFET applications and design considerations, get our essential guide.








