High-performance SGT MOSFETs deliver reliable power switching in a small, thermally optimized footprint
MCC’s latest range of Power MOSFETs in compact DFN packages delivers excellent performance for a variety of power management, switching, and control applications. These devices utilize advanced Split Gate Trench (SGT) technology to achieve low on-resistance, high efficiency, and reliable thermal performance, making them especially suitable for demanding designs across both industrial and consumer electronics.
Every component is engineered with an optimized feature set to address distinct application requirements:
- MCAC150N15Y-TP provides a high voltage rating (150V) with low Rds(on), ideal for battery management, lighting control, and DC-DC converters.
- MCAC2D7N03YL-TP delivers ultra-low on-resistance (2.7mΩ) for minimal power loss, making it perfect for load switching in IoT devices and relay driving.
- MCAC2D6N06YL-TP combines a 60V rating with an extremely low Rds(on) of 2.6mΩ and wide temperature operation (≤175°C), supporting applications in SMPS, motor controls, and industrial equipment.
Their compact DFN5060 package is optimized for heat dissipation and low thermal resistance, ensuring reliable operation even in thermally challenging or space-limited environments. With advanced SGT technology and high-density cell designs, these MOSFETs are built for high-efficiency switching and robust thermal management.
Features & Benefits:
- Advanced Split Gate Trench (SGT) MOSFET Technology
- Low Rds(on) for high efficiency and minimal power loss
- Optimized DFN5060 package for superior heat dissipation
- Low thermal resistance for reliable performance
- High-density cell design (select models) for even lower Rds(on)
- Wide operating junction temperature range up to 175°C (selected models)
- Compact package size: DFN5060
Product Highlights
High-Efficiency N-Channel MOSFETs DFN5060 Package
1
Enhanced Efficiency
Low Rds(on) values and advanced SGT technology minimize power losses, resulting in higher overall system efficiency.
High-Efficiency N-Channel MOSFETs DFN5060 Package
2
Reliable Thermal Performance
The optimized DFN5060 package and low thermal resistance provide excellent heat dissipation, ensuring stable operation even under heavy loads.
High-Efficiency N-Channel MOSFETs DFN5060 Package
3
Space-Saving Design
The compact 5.0 mm x 6.0 mm footprint allows for integration into dense PCB layouts and size-constrained applications.
High-Efficiency N-Channel MOSFETs DFN5060 Package
4
Versatile Application Range
Wide voltage ratings and the ability to operate at high temperatures make these MOSFETs suitable for diverse uses, from battery management to industrial controls.
Applications
These N-channel MOSFETs in DFN5060 packages deliver reliable, efficient performance across a wide range of industries and electronic systems. Their versatility and robust thermal characteristics make them suitable for everything from compact consumer devices to demanding industrial environments.
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Power Management & Conversion |
Industrial Industrial Automation & Control |
Lighting & Building Automation |
Consumer & IoT Devices |
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Product Attributes, Parametrics & Datasheet
Product |
Type |
Package |
Drain Source Voltage VDS |
Drain Source On-Resistance (max.) RDS(on) |
Datasheet |
Power MOSFET |
DNF5060 |
150 |
0.15 |
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Power MOSFET |
DNF5060 |
30 |
0.0027 |
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Power MOSFET |
DNF5060 |
60 |
0.0026 |
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