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High Efficiency with Low Gate Charge and On-Resistance
MCC expands its MOSFET portfolio with the new MCACL280N04Y-TP, a 40V N-channel device designed for efficient high-frequency switching in space-limited designs. This MOSFET features low gate charge and low RDS(on) to reduce switching and conduction losses, supporting enhanced energy efficiency in demanding power systems.
Built on advanced Split Gate Trench (SGT) technology, the MCACL280N04Y-TP offers high-speed switching performance with improved thermal characteristics. Its thermally enhanced DFN-5060-C package ensures stable operation even in densely populated layouts, making it ideal for compact and heat-sensitive applications.
Features & Benefits:
- Split Gate Trench Technology: Enables faster switching and improved energy efficiency.
- Optimized Figure of Merit (FOM): Reduces switching and conduction losses.
- Low Gate Charge (Qg): Supports high-frequency operation and faster transitions.
- Low On-Resistance (RDS(on)): Minimizes conduction losses to improve system efficiency.
- Thermally Enhanced Package: DFN-5060-C form factor supports efficient heat dissipation.
- Compact Size:/b> 5.0 mm x 6.0 mm footprint fits space-constrained designs.
Applications
This 100V P-Channel MOSFET is built for efficient and reliable power switching across a wide range of industries and applications:
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Power Electronics |
Industrial Automation |
Consumer Electronics |
Lighting Solutions |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source |
Drain-Source |
Mounting Type |
Datasheet |
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N-Channel Power MOSFET |
DFN-5060-C |
40V |
0.8mΩ |
Surface-Mount (SMD) |
Contact MCC to request a sample or ask a question.
For a deeper dive into MOSFET applications and design considerations, get our essential guide.
