---
title: "Optimized Power Switching: MCC’s 40V N-Channel MOSFET in DFN-5060-C Package"
description: MCC’s 40 V N‑Channel MOSFET delivers ultra-low RDS(on) of 0.8 mΩ, low gate charge of 79 nC, and efficient thermal performance in a compact DFN‑5060‑C package.
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---
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# Optimized Power Switching: MCC’s 40V N-Channel MOSFET in DFN-5060-C Package
# Optimized Power Switching: MCC’s 40V N-Channel MOSFET in DFN-5060-C Package
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
by [MCC](https://solutions.mccsemi.com/news/author/mcc)
July 03, 2025
## High Efficiency with Low Gate Charge and On-Resistance
MCC expands its MOSFET portfolio with the new [**MCACL280N04Y-TP**](https://www.mccsemi.com/products/mosfets/power-mosfets/mcacl280n04y), a 40V N-channel device designed for efficient high-frequency switching in space-limited designs. This MOSFET features low gate charge and low RDS(on) to reduce switching and conduction losses, supporting enhanced energy efficiency in demanding power systems.
Built on advanced Split Gate Trench (SGT) technology, the MCACL280N04Y-TP offers high-speed switching performance with improved thermal characteristics. Its thermally enhanced DFN-5060-C package ensures stable operation even in densely populated layouts, making it ideal for compact and heat-sensitive applications.
[Efficient 40V N-Channel](https://www.mccsemi.com/products/diodes/schottky-barrier-rectifiers/mbrp10100q)
##### Features & Benefits:
- **Split Gate Trench Technology:** Enables faster switching and improved energy efficiency.
- **Optimized Figure of Merit (FOM):** Reduces switching and conduction losses.
- **Low Gate Charge (Qg):** Supports high-frequency operation and faster transitions.
- **Low On-Resistance (RDS(on)):** Minimizes conduction losses to improve system efficiency.
- **Thermally Enhanced Package:** DFN-5060-C form factor supports efficient heat dissipation.
- **Compact Size:/b\> 5.0 mm x 6.0 mm footprint fits space-constrained designs.**
**[MCACL280N04Y](https://www.mccsemi.com/products/mosfets/power-mosfets/mcacl280n04y)
**
**## Product Highlights
MCC’s MCACL280N04Y-TP delivers performance, efficiency, and reliability in a compact footprint. Its combination of low gate charge, low RDS(on), and strong thermal handling makes it a versatile component for high-efficiency switching.
40V N-Channel MOSFET in DFN-5060-C Package
### 1
###### Enhanced Efficiency
Low gate charge and an optimized FOM help reduce overall power loss, boosting energy efficiency in switching systems.
40V N-Channel MOSFET in DFN-5060-C Package
### 2
###### Reliable Thermal Performance
The DFN-5060-C package is designed to manage heat effectively, extending reliability and supporting compact thermal designs.
40V N-Channel MOSFET in DFN-5060-C Package
### 3
###### Compact Form Factor
With a small 5.0 mm x 6.0 mm footprint, this MOSFET is ideal for designs where board space is limited but performance cannot be compromised.
40V N-Channel MOSFET in DFN-5060-C Package
### 4
###### Fast Switching Response
Low RDS(on) and SGT architecture allow high-speed operation, ideal for high-frequency switching applications.
## Applications
This 100V P-Channel MOSFET is built for efficient and reliable power switching across a wide range of industries and applications:
|  |  |  |  |
| --- | --- | --- | --- |
| Power Electronics | Industrial Automation | Consumer Electronics | Lighting Solutions |
| - DC-DC converters - Solar power systems | - Motor control - Monitoring systems | - Portable devices - Power management modules | - LED lighting - Lighting control systems |
## Product Attributes, Parametrics & Datasheet
| Product | Type | Package | Drain-Source Voltage VDS | Drain-Source On-Resistance (max.)RDS(on) | Mounting Type | Datasheet |
| --- | --- | --- | --- | --- | --- | --- |
| [MCACL280N04Y](https://www.mccsemi.com/products/mosfets/power-mosfets/mcacl280n04y) | N-Channel Power MOSFET | DFN-5060-C | 40V | 0.8mΩ | Surface-Mount (SMD) | [Info](https://www.mccsemi.com/pdf/products/MCACL280N04Y(DFN5060-C).pdf) |
###### **[Contact MCC](https://solutions.mccsemi.com/news/optimized-power-switching:-mcc%E2%80%99s-40v-n-channel-mosfet-in-dfn-5060-c-package#hs-chat-open) to request a sample or ask a question.**
For a deeper dive into MOSFET applications and design considerations, get our [essential guide.](https://solutions.mccsemi.com/the-essential-guide-to-40v-mosfet-functions-features)
**
**###### Tags:
[New Product Introductions,](https://solutions.mccsemi.com/news/tag/new-product-introductions) [News,](https://solutions.mccsemi.com/news/tag/news) [MOSFETs](https://solutions.mccsemi.com/news/tag/mosfets)**
**#### Related Content
[](https://solutions.mccsemi.com/news/high-efficiency-power-in-compact-form-mccs-40v-n-channel-mosfets)
June 30, 2026
#### [High‑Efficiency Power in Compact Form: MCC’s 40V N‑Channel MOSFETs](https://solutions.mccsemi.com/news/high-efficiency-power-in-compact-form-mccs-40v-n-channel-mosfets)
[](https://solutions.mccsemi.com/news/mcc-introduces-40v-n-channel-mosfet-with-0.58mω-rdson-for-high-current-power-designs)
April 13, 2026
#### [MCC Introduces 40V N-Channel MOSFET with 0.58mΩ RDS(on) for High-Current Power Designs](https://solutions.mccsemi.com/news/mcc-introduces-40v-n-channel-mosfet-with-0.58mω-rdson-for-high-current-power-designs)
[](https://solutions.mccsemi.com/news/mcc-introduces-a-high-efficiency-40-v-n-channel-mosfet-with-ultra-low-2.6-mω-rdson)
December 8, 2025
#### [MCC Introduces a High-Efficiency 40V N-Channel MOSFET with Ultra-Low 2.6 mΩ RDS(on)](https://solutions.mccsemi.com/news/mcc-introduces-a-high-efficiency-40-v-n-channel-mosfet-with-ultra-low-2.6-mω-rdson)
[](https://solutions.mccsemi.com/news/meet-mccs-150v-mosfet-in-a-space-saving-pdfn3333-package)
August 11, 2025
#### [Meet MCC’s 150V MOSFET in a Space-Saving PDFN3333 Package](https://solutions.mccsemi.com/news/meet-mccs-150v-mosfet-in-a-space-saving-pdfn3333-package)
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
Post by [MCC](https://solutions.mccsemi.com/news/author/mcc)
July 3, 2025
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