2.9 mΩ Rds(on) and AEC‑Q101 Qualification in a Thermally Efficient DFN5060 Package
MCC introduces the MCAC2D9N04YHQ, a 40 V single N‑Channel MOSFET purpose-built for designers who need to switch high currents in minimal board space while maintaining high efficiency and safe operating temperatures in 12 V and 24 V systems. Using advanced split-gate trench technology, this device achieves an ultra-low 2.9 mΩ Rds(on) in a compact DFN5060 (5.0 mm × 6.0 mm) package, cutting conduction and switching losses and enabling high power density in space-constrained layouts.
AEC-Q101 automotive qualification and a robust 40 V VDS rating provide reliable operation under voltage spikes and harsh electrical conditions, making it well-suited for EV body electronics, DC-DC converters, battery management systems, energy storage, and motor control. A low 1.4 °C/W junction-to-case thermal resistance improves heat transfer and supports high current operation without bulky thermal solutions, while RoHS and halogen-free compliance ensure the MCAC2D9N04YHQ fits seamlessly into environmentally responsible, regulation-ready designs.
Features & Benefits:
- AEC-Q101 qualified for automotive-grade reliability and robustness
- Split-Gate Trench MOSFET technology optimized for low on-resistance and high switching speed
- Low Rds(on) of 2.9 mΩ (max) at Vgs = 10 V, minimizing conduction losses, reducing heat generation, and improving overall system efficiency
- 40 V drain-source voltage (VDS) rating, providing ample margin for handling voltage spikes and ringing in 12 V and 24 V automotive battery systems
- Low thermal resistance of 1.4 °C/W (junction-to-case) to enhance heat transfer and support stable operation at higher power levels
- Compact DFN5060 package (5.0 mm × 6.0 mm) enabling ultra-compact, high-current designs with excellent thermal performance
Product Highlights
40V 2.9mΩ N-CHANNEL MOSFET
1
High Power Density in Compact Designs
Ultra-low Rds(on) of 2.9 mΩ in a small DFN5060 (5.0 mm × 6.0 mm) package supports high-current operation in tight board spaces, allowing more power functionality per unit area.
40V 2.9mΩ N-CHANNEL MOSFET
2
Improved System Efficiency and Thermal Performance
Low conduction losses combined with 1.4 °C/W junction-to-case thermal resistance reduce heat generation and simplify thermal management, enabling cooler, more efficient systems.
40V 2.9mΩ N-CHANNEL MOSFET
3
Automotive-Grade Reliability and Voltage Robustness
AEC-Q101 qualification and a 40 V VDS rating provide confidence against voltage spikes and harsh operating conditions in 12 V and 24 V automotive environments, enhancing long-term system reliability.
40V 2.9mΩ N-CHANNEL MOSFET
4
Faster, Cleaner Switching for Precision Control
Split-gate trench technology delivers high switching speed and low switching losses, supporting cleaner waveforms, reduced EMI, and more precise control in DC-DC converters, motor drives, and load switches.
Applications
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Automotive & EV Systems |
Industrial Power Conversion |
General Load Management & Switching |
Energy Storage & Battery Management |
Motor Drives & Motion Control |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source |
Drain-Source |
Drain |
Drain-Source |
Datasheet |
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Power MOSFET |
Single N |
40 |
145 |
0.0029 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.
For a deeper dive into MOSFET applications and design considerations, get our essential guide.








