MCC is proud to introduce our first 1700V 25A SiC Schottky barrier diode, SICPT25170P. This component solves multiple design challenges commonly found in high-power designs — from switching losses and excessive heat to inconsistent performance. Our SiC SBD is engineered for efficiency in fast-switching circuits thanks to zero reverse recovery current, minimal energy losses, and high-speed switching.

Housed in a rugged TO-247AD package, this diode is made for extreme working conditions and operating junction temperatures up to 175°C. Adding to its reliability, superior thermal efficiency maintains stable operation under extreme loads, while the positive temperature coefficient enables safe parallel use.

Its temperature-independent switching characteristics eliminate performance drift, ensuring this diode is a dependable solution for rigorous applications — from industrial automation and power supplies to EV-charging infrastructure.

Minimal heat dissipation requirements mean our SiC SBD also reduces the need for bulky or expensive cooling solutions, supporting more compact and energy-efficient designs. MCC’s diode offers an impressive combination of robust construction, advanced switching performance, and simplified thermal management — making it the intelligent choice for high-power applications.