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SICW30120DG5M Silicon Carbide Schottky Barrier Diode (SiC SBD) Featuring Zero Reverse Recovery, Low Forward Voltage, and High Surge Capability for Next-Generation Power Systems
Micro Commercial Components (MCC) introduces the SICW30120DG5M-BP, a high-performance 1200V, 30A Silicon Carbide (SiC) Schottky Barrier Diode designed to maximize efficiency in high-voltage, high-frequency power conversion systems. As modern power electronics continue to demand greater efficiency, higher switching frequencies, and increased power density, engineers require rectifier solutions that minimize switching losses while delivering outstanding thermal performance and long-term reliability.
The SICW30120DG5M-BP addresses these challenges by combining a 1200V reverse voltage rating with a 30A average forward current capability in an industry-standard TO-247AB package. Built on advanced Merged PiN Schottky (MPS) Silicon Carbide technology, the device features zero reverse recovery current, a low forward voltage of only 1.6V, high surge current capability of 180A, and a maximum junction temperature of 175°C. These characteristics make it an excellent choice for switching mode power supplies (SMPS), power factor correction (PFC), EV charging infrastructure, motor drives, renewable energy systems, and industrial power conversion equipment.
1200V Silicon Carbide Schottky Barrier Diode (SiC SBD)
Features & Benefits:
- 1200V Reverse Voltage Rating: Supports high-voltage power conversion applications while providing ample design margin for demanding industrial and energy systems.
- Zero Reverse Recovery Current: Eliminates reverse recovery losses, reducing switching losses, EMI, and improving overall system efficiency.
- Low Forward Voltage: Maximum VF of only 1.6V minimizes conduction losses and improves power conversion efficiency.
- Merged PiN Schottky (MPS) Technology: Combines the low switching losses of Schottky diodes with enhanced surge current capability for improved robustness.
- High Surge Current Capability: IFSM up to 180A withstands inrush currents and transient overload conditions, enhancing system reliability.
- High Junction Temperature: Supports operation up to 175°C, enabling reliable performance in harsh operating environments while reducing cooling requirements.
- TO-247AB Package: Industry-standard through-hole package provides excellent thermal performance and simplified heatsink attachment for high-power applications.
- RoHS Compliant: Supports environmentally responsible electronic product development.
Applications
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Industrial Power Systems
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Power Conversion
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Renewable Energy
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UPS & Energy System
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
VRRM (V) |
IF (A) |
VF [max] (V) |
IFSM(A) |
IR (µA) [max] |
Datasheet |
| SICW30120DG5M-BP |
TO-247AB |
1200 |
30 |
1.6 |
180 |
25 |
Now available, purchase directly from MCC or through our authorized distributors.
To learn more about selecting the right Silicon Carbide (SiC) Schottky Barrier Diode for your application, explore our Engineer's Guide to Choosing the Right SiC Schottky Diode. It covers key selection criteria, performance advantages, and practical design considerations for high-efficiency power conversion
For technical inquiries or sample requests, contact MCC for support.
