Zero Reverse Recovery Current, 90A Continuous Current Capability, and MPS Technology for Industrial and Charging Applications

MCC introduces the SICWT40120G6M, a 1200V Silicon Carbide Schottky diode designed to overcome the switching losses, thermal stress, and reliability limitations commonly found in high‑voltage, high‑frequency power conversion systems. Conventional rectifier solutions often increase power dissipation, require larger cooling solutions, and restrict power density, especially under high current and high temperature conditions

Built on advanced Merged PiN Schottky (MPS) technology, the SICWT40120G6M delivers zero reverse recovery behavior, low forward voltage, and very low leakage current to significantly reduce switching and conduction losses. High continuous and surge current capability, a wide −55°C to +175°C junction temperature range, and a positive temperature coefficient ensure stable and reliable operation in demanding environments. Housed in a robust TO‑247AD package with strong thermal performance, this diode enables more compact, efficient, and reliable designs for industrial power conversion, transportation, and charging infrastructure applications.

1200V Gen6 SiC Schottky Diode

Features & Benefits:

• Merged PiN Schottky (MPS) technology for low leakage, fast switching, and high surge robustness
• Zero reverse recovery current, eliminating switching losses and EMI at high frequencies
• High current capability: IF = 90A and IFSM = 330A at 25°C for demanding power stages
• 1200V VRRM rating for high-voltage rectification and DC link applications
• Low forward voltage: VF = 1.65V at 25°C, reducing conduction losses
• Very low leakage current: IR ≤ 25µA at 25°C for stable high-temperature operation
• Wide junction temperature range from −55°C to +175°C
• Positive temperature coefficient to help prevent thermal runaway
• TO-247AD package with strong thermal performance

SICWT40120G6M

Applications

Understanding MPS-Based SiC Schottky Architecture 

The SICWT40120G6M is built on Merged PiN Schottky (MPS) technology, a structural evolution of standard SiC Schottky designs that combines majority-carrier switching behavior with enhanced surge robustness. Under normal operation, current flows through the Schottky region for fast switching and low loss. During high-current or surge events, the embedded PiN regions activate to support higher current handling and improved thermal stability. This structure is particularly well suited for high-power rectification stages where both efficiency and surge capability are critical.

SiC Schottky devices are available in multiple structural variants, including SBD, JBS, and MPS, each optimized for different trade-offs between leakage control, switching performance, and surge robustness. To understand how these structures differ and how to select the right architecture for your operating conditions, explore our in-depth technical guide: Choosing the Right SiC Schottky Diode (SBD vs JBS vs MPS)

Product Attributes, Parametrics & Datasheet

Now available, purchase directly from MCC or through our authorized distributors.  

For technical inquiries or sample requests, contact MCC for support.