---
title: MCC Introduces 1200V Gen6 SiC Schottky Diode in TO-247AD for High-Power Rectification
description: 1200V Gen6 SiC Schottky diode in TO-247AD with zero reverse recovery current, 90A continuous current, and 330A surge capability for high-power applications.
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---
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# MCC Introduces 1200V Gen6 SiC Schottky Diode in TO-247AD for High-Power Rectification
# MCC Introduces 1200V Gen6 SiC Schottky Diode in TO-247AD for High-Power Rectification
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
by [MCC](https://solutions.mccsemi.com/news/author/mcc)
March 03, 2026
## Zero Reverse Recovery Current, 90A Continuous Current Capability, and MPS Technology for Industrial and Charging Applications
MCC introduces the [SICWT40120G6M](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt40120g6m), a 1200V Silicon Carbide Schottky diode designed to overcome the switching losses, thermal stress, and reliability limitations commonly found in high‑voltage, high‑frequency power conversion systems. Conventional rectifier solutions often increase power dissipation, require larger cooling solutions, and restrict power density, especially under high current and high temperature conditions
Built on advanced Merged PiN Schottky (MPS) technology, the SICWT40120G6M delivers zero reverse recovery behavior, low forward voltage, and very low leakage current to significantly reduce switching and conduction losses. High continuous and surge current capability, a wide −55°C to +175°C junction temperature range, and a positive temperature coefficient ensure stable and reliable operation in demanding environments. Housed in a robust TO‑247AD package with strong thermal performance, this diode enables more compact, efficient, and reliable designs for industrial power conversion, transportation, and charging infrastructure applications.
[1200V Gen6 SiC Schottky Diode](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt40120g6m)
##### Features & Benefits:
- Merged PiN Schottky (MPS) technology for low leakage, fast switching, and high surge robustness
- Zero reverse recovery current, eliminating switching losses and EMI at high frequencies
- High current capability: IF = 90A and IFSM = 330A at 25°C for demanding power stages
- 1200V VRRM rating for high-voltage rectification and DC link applications
- Low forward voltage: VF = 1.65V at 25°C, reducing conduction losses
- Very low leakage current: IR ≤ 25µA at 25°C for stable high-temperature operation
- Wide junction temperature range from −55°C to +175°C
- Positive temperature coefficient to help prevent thermal runaway
- TO-247AD package with strong thermal performance
[SICWT40120G6M](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt40120g6m)
[Download Flyer](https://solutions.mccsemi.com/hubfs/NPI%20Flyers/MCC%20Introduces%201200V%20Gen6%20SiC%20Schottky%20Diode%20in%20TO-247AD%20for%20High-Power%20Rectification.pdf)
## Product Highlights
1200V SiC Schottky diode
### 1
###### High System Efficiency
Zero reverse recovery current and low forward voltage reduce both switching and conduction losses, improving overall power conversion efficiency.
1200V SiC Schottky diode
### 2
###### Thermal Reliability
Wide junction temperature range up to 175°C and a positive temperature coefficient support stable operation under high thermal stress and help prevent thermal runaway.
1200V SiC Schottky diode
### 3
###### High Power Capability
High continuous and surge current ratings enable reliable operation in demanding high-power rectification and motor drive applications.
1200V SiC Schottky diode
### 4
###### Reduced System Complexity
Low leakage current and fast switching behavior allow smaller cooling solutions and simpler EMI filtering, supporting higher power density designs.
## Applications
|  |  |  |  |
| --- | --- | --- | --- |
| ** Industrial Power Supplies** | ** Power Quality and Energy Conditioning** | **Motion Control and Transportation** | ** Charging Infrastructure and Energy Delivery** |
| - AC/DC and DC/DC switching power supplies - Server and telecom power systems - Industrial automation power modules | - Power factor correction (PFC) circuits - Uninterruptible power supplies (UPS) - Active front-end (AFE) rectifiers | - Motor drives and inverters - Traction systems for rail and electric vehicles - Industrial servo drives and robotics | - Charging piles and high-power chargers - Fast chargers for industrial equipment and energy storage systems |
## Understanding MPS-Based SiC Schottky Architecture
The [SICWT40120G6M](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt40120g6m) is built on Merged PiN Schottky (MPS) technology, a structural evolution of standard SiC Schottky designs that combines majority-carrier switching behavior with enhanced surge robustness. Under normal operation, current flows through the Schottky region for fast switching and low loss. During high-current or surge events, the embedded PiN regions activate to support higher current handling and improved thermal stability. This structure is particularly well suited for high-power rectification stages where both efficiency and surge capability are critical.
SiC Schottky devices are available in multiple structural variants, including SBD, JBS, and MPS, each optimized for different trade-offs between leakage control, switching performance, and surge robustness. To understand how these structures differ and how to select the right architecture for your operating conditions, explore our in-depth technical guide: [Choosing the Right SiC Schottky Diode (SBD vs JBS vs MPS)](https://solutions.mccsemi.com/choosing-the-right-sic-schottky)
## Product Attributes, Parametrics & Datasheet
| Product | Type | Package | Average Forward Current IF(AV)(A) | Peak Repetitive Reverse Voltage VRRM (V) | Forward Voltage VF (V) \[max\]@IF(A) | At Rated Forward Current IF (A) | Reverse Voltage Leakage Current IR (uA) \[max\] @ VR | Datasheet |
| --- | --- | --- | --- | --- | --- | --- | --- | --- |
| [SICWT40120G6M](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt40120g6m) | [SiC Schottky Barrier Diodes (SBDs)](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds) | [TO-247AD](https://www.mccsemi.com/pdf/productpackaging/TO-247AD%20Package.pdf) | 40 | 1200 | 1.65 | 40 | 25 | [Info](https://www.mccsemi.com/pdf/products/SICWT40120G6M(TO-247AD).pdf) |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, [contact MCC](https://solutions.mccsemi.com/news/mcc-introduces-1200v-gen6-sic-schottky-diode-in-to-247ad-for-high-power-rectification#hs-chat-open) for support.
###### Tags:
[New Product Introductions,](https://solutions.mccsemi.com/news/tag/new-product-introductions) [News,](https://solutions.mccsemi.com/news/tag/news) [Silicon Carbide,](https://solutions.mccsemi.com/news/tag/silicon-carbide) [Schottky Barrier Rectifers](https://solutions.mccsemi.com/news/tag/schottky-barrier-rectifers)
#### Related Content
[](https://solutions.mccsemi.com/news/mcc-introduces-high-efficiency-1200v-gen4-sic-schottky-diodes-for-automotive-power-systems)
February 24, 2026
#### [MCC Introduces High-Efficiency 1200V Gen4 SiC Schottky Diodes for Automotive Power Systems](https://solutions.mccsemi.com/news/mcc-introduces-high-efficiency-1200v-gen4-sic-schottky-diodes-for-automotive-power-systems)
[](https://solutions.mccsemi.com/news/high-efficiency-1200v-sic-schottky-barrier-diode-for-high-power-industrial-applications)
August 14, 2026
#### [High-Efficiency 1200V SiC Schottky Barrier Diode for High-Power Industrial Applications](https://solutions.mccsemi.com/news/high-efficiency-1200v-sic-schottky-barrier-diode-for-high-power-industrial-applications)
[](https://solutions.mccsemi.com/news/high-efficiency-power-conversion-with-mccs-1200v-30a-sic-schottky-barrier-diode)
August 6, 2026
#### [High-Efficiency Power Conversion with MCC's 1200V 30A SiC Schottky Barrier Diode](https://solutions.mccsemi.com/news/high-efficiency-power-conversion-with-mccs-1200v-30a-sic-schottky-barrier-diode)
[](https://solutions.mccsemi.com/news/power-up-efficiency-mcc-launches-1200v-ultrafast-recovery-diodes-in-to-247ad)
December 16, 2025
#### [Power Up Efficiency: MCC Launches 1200V Super Fast Recovery Diodes in TO-247AD](https://solutions.mccsemi.com/news/power-up-efficiency-mcc-launches-1200v-ultrafast-recovery-diodes-in-to-247ad)
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
Post by [MCC](https://solutions.mccsemi.com/news/author/mcc)
March 3, 2026
MCC is a leading integrated device manufacturer (IDM) of discrete semiconductors worldwide. Headquartered in the US, we deliver supply chain assurance, best-in-class support, and a diverse portfolio of 10,000+ advanced components to help customers innovate in automotive, industrial, and beyond.
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130 W Cochran St, Unit B
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