High‑Efficiency Silicon Carbide MPS Diodes for High‑Current Power Conversion with Automotive‑Grade AEC‑Q101 Option

MCC expands its power portfolio with the Gen5 SiC Schottky Diode Series, a family of high‑current 650 V Silicon Carbide Schottky Barrier Diodes designed for low conduction loss, fast switching, and reliable operation in demanding electrical and thermal conditions. Built on advanced Merged PiN Schottky (MPS) technology and housed in the industry‑standard D2‑PAK package, these devices support compact, high‑power designs with effective thermal dissipation.

Optimized for high‑efficiency power systems, the Gen5 SiC series combines a low forward voltage drop of 1.3 V, near‑zero reverse recovery behavior, and a maximum junction temperature of 175 °C. These characteristics reduce switching losses, increase power density, and simplify thermal management in applications such as PFC stages, industrial power supplies, renewable energy inverters, and high‑current rectification.

The series includes SICB2065XG5M and the automotive‑grade SICB2065XG5MQ, which is fully qualified to AEC‑Q101. With high current capability, clean switching performance, and a positive temperature coefficient, these devices help designers meet efficiency and reliability targets while minimizing EMI and ensuring stable operation under high load and elevated temperatures.

Gen5 650V SiC Schottky Diode

Features & Benefits:

• Advanced Merged PiN Schottky (MPS) technology for high efficiency and robustness
• Near-zero reverse recovery current (Qc = 136 nC), reducing switching losses and EMI
• Low forward voltage drop (VF = 1.3 V) to improve system efficiency
• High current capability (IF = 86 A) for high-power conversion stages
• 650 V VRRM rating for high-voltage rectification and blocking applications
• High-speed switching performance for high-frequency operation
• Positive temperature coefficient to help prevent thermal runaway
• Maximum junction temperature up to 175 °C for high-temperature operation
• Automotive-grade option available (AEC‑Q101 qualified part number SICB2065XG5MQ)
• D2‑PAK surface-mount package for efficient thermal dissipation and mechanical reliability

SICB2065XG5MQ

SICB2065XG5M

 

Applications

The Gen5 SiC Schottky Diode Series is well suited for a wide range of high‑power and high‑efficiency applications where low losses, fast switching, and thermal stability are critical. Its combination of high current capability, 650 V blocking performance, and robust Gen5 SiC MPS technology supports reliable operation across industrial, energy, power infrastructure, and automotive systems, with an AEC‑Q101 qualified option available for demanding vehicle environments.    

Understanding Gen5 SiC Technology 

Selecting the right Silicon Carbide (SiC) diode requires more than simply matching voltage and current ratings. Device architecture, switching behavior, surge performance, and thermal headroom all play critical roles in ensuring long-term system reliability.

The Gen5 650 V series is built on an advanced Merged PiN Schottky (MPS) structure that combines the low switching losses of a Schottky diode with significantly improved surge robustness and reliability. Compared to earlier SiC generations, Gen5 technology delivers:

• Lower conduction and switching losses
• Improved stability at high temperatures
• Enhanced surge current capability
• Greater design margin in high‑frequency applications

For engineers comparing SiC generations or evaluating MPS, JBS, and conventional Schottky structures, MCC offers a comprehensive technical guide detailing structural differences, performance trade-offs, and key design considerations.

Learn more about selecting the right SiC Schottky diode for your application: Choosing the Right SiC Schottky Diode (SBD vs JBS vs MPS)

Product Attributes, Parametrics & Datasheet

Now available, purchase directly from MCC or through our authorized distributors.  

For technical inquiries or sample requests, contact MCC for support.