---
title: MCC Introduces Gen5 650V SiC Schottky Diode Series in D2‑PAK Packages
description: MCC launches Gen5 650V SiC Schottky Diodes with MPS technology, near-zero reverse recovery, low 1.3V VF, 86A current capability, and 175°C operation in D2-PAK packages for demanding power system
image: https://solutions.mccsemi.com/hubfs/MCC%20Introduces%20Gen5%20650V%20SiC%20Schottky%20Diode%20Series%20in%20D2%E2%80%90PAK%20Packages%20%20SICB2065XG5MQ%20%20SICB2065XG5M%20%20-%20mcc%20semi%20-%20micro%20commercial%20components%201080x400.png
---
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# MCC Introduces Gen5 650V SiC Schottky Diode Series in D2‑PAK Packages
# MCC Introduces Gen5 650V SiC Schottky Diode Series in D2‑PAK Packages
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
by [MCC](https://solutions.mccsemi.com/news/author/mcc)
March 06, 2026
## High‑Efficiency Silicon Carbide MPS Diodes for High‑Current Power Conversion with Automotive‑Grade AEC‑Q101 Option
MCC expands its power portfolio with the Gen5 SiC Schottky Diode Series, a family of high‑current 650 V Silicon Carbide Schottky Barrier Diodes designed for low conduction loss, fast switching, and reliable operation in demanding electrical and thermal conditions. Built on advanced Merged PiN Schottky (MPS) technology and housed in the industry‑standard D2‑PAK package, these devices support compact, high‑power designs with effective thermal dissipation.
Optimized for high‑efficiency power systems, the Gen5 SiC series combines a low forward voltage drop of 1.3 V, near‑zero reverse recovery behavior, and a maximum junction temperature of 175 °C. These characteristics reduce switching losses, increase power density, and simplify thermal management in applications such as PFC stages, industrial power supplies, renewable energy inverters, and high‑current rectification.
The series includes[SICB2065XG5M](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicb2065xg5m) and the automotive‑grade [SICB2065XG5MQ](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicb2065xg5mq), which is fully qualified to AEC‑Q101. With high current capability, clean switching performance, and a positive temperature coefficient, these devices help designers meet efficiency and reliability targets while minimizing EMI and ensuring stable operation under high load and elevated temperatures.
Gen5 650V SiC Schottky Diode
##### Features & Benefits:
- Advanced Merged PiN Schottky (MPS) technology for high efficiency and robustness
- Near-zero reverse recovery current (Qc = 136 nC), reducing switching losses and EMI
- Low forward voltage drop (VF = 1.3 V) to improve system efficiency
- High current capability (IF = 86 A) for high-power conversion stages
- 650 V VRRM rating for high-voltage rectification and blocking applications
- High-speed switching performance for high-frequency operation
- Positive temperature coefficient to help prevent thermal runaway
- Maximum junction temperature up to 175 °C for high-temperature operation
- Automotive-grade option available (AEC‑Q101 qualified part number SICB2065XG5MQ)
- D2‑PAK surface-mount package for efficient thermal dissipation and mechanical reliability
[SICB2065XG5MQ](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/SICB2065XG5MQ)
[SICB2065XG5M](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/SICB2065XG5M)
[Download Flyer](https://solutions.mccsemi.com/hubfs/NPI%20Flyers/MCC%20Introduces%20Gen5%20650V%20SiC%20Schottky%20Diode%20Series%20in%20D2%E2%80%90PAK%20Packages.pdf)
## Product Highlights
Gen5 650V SiC Schottky Diode
### 1
###### Higher System Efficiency
Low forward voltage drop (1.3 V) and near‑zero reverse recovery current minimize conduction and switching losses, improving overall power conversion efficiency.
Gen5 650V SiC Schottky Diode
### 2
###### Latest-Generation MPS Technology
Gen5 Merged PiN Schottky (MPS) architecture delivers faster switching, lower losses, and improved robustness compared to conventional and earlier‑generation SiC diodes.
Gen5 650V SiC Schottky Diode
### 3
###### Improved Thermal Reliability
A positive temperature coefficient and operation up to 175 °C ensure stable performance under high load and elevated temperatures, reducing thermal stress in demanding applications.
Gen5 650V SiC Schottky Diode
### 4
###### Design Flexibility and Robustness
High current capability (86 A), 650 V blocking voltage, and a thermally efficient D2‑PAK package support compact, high‑power designs, with an AEC‑Q101 automotive‑qualified option available.
## Applications
The Gen5 SiC Schottky Diode Series is well suited for a wide range of high‑power and high‑efficiency applications where low losses, fast switching, and thermal stability are critical. Its combination of high current capability, 650 V blocking performance, and robust Gen5 SiC MPS technology supports reliable operation across industrial, energy, power infrastructure, and automotive systems, with an AEC‑Q101 qualified option available for demanding vehicle environments.
|  |  |  |
| --- | --- | --- |
| ** Power Conversion & Power Management ** | ** Industrial & Automation ** | **Renewable Energy & Energy Infrastructure ** |
| - Switching power supplies (SMPS) - Power factor correction (PFC) stages - AC/DC and DC/DC converters - Server and telecom power supplies - High-efficiency adapters and PSU designs | - Industrial power systems - Factory automation power modules - Welding equipment and induction heating - UPS systems and backup power units - High-reliability industrial rectifiers - Motor drivers | - Renewable energy inverters - Solar string and central inverters - Energy storage systems (ESS) - Wind power conversion systems - Grid-connected power interfaces |
|  |  |  |
| --- | --- | --- |
| ** High-Current Power Distribution** | ** Charging Infrastructure ** | **Automotive (AEC-Q101 Option) ** |
| - High-current rectification stages - High-power DC links - Battery formation and test equipment | - Charging piles - Off-board charging systems - Fast DC charging equipment - Power modules for charging stations | - On-board chargers (OBC) - DC/DC converters - Auxiliary power supplies - Electrified powertrain and traction inverters - Automotive charging and power distribution modules |
## Understanding Gen5 SiC Technology
Selecting the right Silicon Carbide (SiC) diode requires more than simply matching voltage and current ratings. Device architecture, switching behavior, surge performance, and thermal headroom all play critical roles in ensuring long-term system reliability.
The Gen5 650 V series is built on an [advanced Merged PiN Schottky (MPS) structure](https://solutions.mccsemi.com/choosing-the-right-sic-schottky) that combines the low switching losses of a Schottky diode with significantly improved surge robustness and reliability. Compared to earlier SiC generations, Gen5 technology delivers:
- Lower conduction and switching losses
- Improved stability at high temperatures
- Enhanced surge current capability
- Greater design margin in high‑frequency applications
For engineers comparing SiC generations or evaluating MPS, JBS, and conventional Schottky structures, MCC offers a comprehensive technical guide detailing structural differences, performance trade-offs, and key design considerations.
Learn more about selecting the right SiC Schottky diode for your application: [Choosing the Right SiC Schottky Diode (SBD vs JBS vs MPS)](https://solutions.mccsemi.com/choosing-the-right-sic-schottky)
## Product Attributes, Parametrics & Datasheet
| Product | Type | Package | Average Forward Current IF(AV)(A) | AEC-Q101 | Peak Repetitive Reverse Voltage VRRM (V) | Forward Voltage VF (V) \[max\]@IF(A) | At Rated Forward Current IF (A) | Reverse Voltage Leakage Current IR (uA) \[max\] @ VR | Datasheet |
| --- | --- | --- | --- | --- | --- | --- | --- | --- | --- |
| [SICB2065XG5MQ](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/SICB2065XG5MQ) | [SiC Schottky Barrier Diodes (SBDs)](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds) | [D2-PAK](https://www.mccsemi.com/pdf/products/SICB2065XG5MQ(D2-PAK).pdf) | 20 | Yes | 650 | 1.3 | 20 | 25 | [Info](https://www.mccsemi.com/pdf/products/SICB2065XG5MQ(D2-PAK).pdf) |
| [SICB2065XG5M](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/SICB2065XG5M) | [SiC Schottky Barrier Diodes (SBDs)](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds) | [D2-PAK](https://www.mccsemi.com/pdf/products/SICB2065XG5MQ(D2-PAK).pdf) | 20 | No | 650 | 1.3 | 20 | 25 | [Info](https://www.mccsemi.com/pdf/products/SICB2065XG5M(D2-PAK).pdf) |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, [contact MCC](https://solutions.mccsemi.com/news/mcc-introduces-gen5-650v-sic-schottky-diode-series-in-d2-pak-packages#hs-chat-open) for support.
###### Tags:
[New Product Introductions,](https://solutions.mccsemi.com/news/tag/new-product-introductions) [News,](https://solutions.mccsemi.com/news/tag/news) [Silicon Carbide,](https://solutions.mccsemi.com/news/tag/silicon-carbide) [Schottky Barrier Rectifers](https://solutions.mccsemi.com/news/tag/schottky-barrier-rectifers)
#### Related Content
[](https://solutions.mccsemi.com/news/mcc-introduces-gen4-sic-schottky-diodes-for-high-voltage-efficiency)
February 19, 2026
#### [MCC Introduces Gen4 SiC Schottky Diodes for High-Voltage Efficiency](https://solutions.mccsemi.com/news/mcc-introduces-gen4-sic-schottky-diodes-for-high-voltage-efficiency)
[](https://solutions.mccsemi.com/news/mcc-introduces-high-efficiency-1200v-gen4-sic-schottky-diodes-for-automotive-power-systems)
February 24, 2026
#### [MCC Introduces High-Efficiency 1200V Gen4 SiC Schottky Diodes for Automotive Power Systems](https://solutions.mccsemi.com/news/mcc-introduces-high-efficiency-1200v-gen4-sic-schottky-diodes-for-automotive-power-systems)
[](https://solutions.mccsemi.com/news/mcc-introduces-650v-1200v-gen4-sic-schottky-barrier-rectifiers)
March 25, 2026
#### [MCC Introduces 650V–1200V Gen4 SiC Schottky Barrier Rectifiers](https://solutions.mccsemi.com/news/mcc-introduces-650v-1200v-gen4-sic-schottky-barrier-rectifiers)
[](https://solutions.mccsemi.com/news/mcc-introduces-1200v-gen6-sic-schottky-diode-in-to-247ad-for-high-power-rectification)
March 3, 2026
#### [MCC Introduces 1200V Gen6 SiC Schottky Diode in TO-247AD for High-Power Rectification](https://solutions.mccsemi.com/news/mcc-introduces-1200v-gen6-sic-schottky-diode-in-to-247ad-for-high-power-rectification)
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
Post by [MCC](https://solutions.mccsemi.com/news/author/mcc)
March 6, 2026
MCC is a leading integrated device manufacturer (IDM) of discrete semiconductors worldwide. Headquartered in the US, we deliver supply chain assurance, best-in-class support, and a diverse portfolio of 10,000+ advanced components to help customers innovate in automotive, industrial, and beyond.
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