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Zero Reverse Recovery Rectifiers in DPAK, D2-PAK, and TO-220AC Packages
MCC introduces the Gen4 SiC Schottky Diode Series, a family of high-voltage Silicon Carbide (SiC) Schottky Barrier Diodes engineered for high-efficiency power conversion and robust thermal performance in demanding applications. With 650V and 1200V peak repetitive reverse voltage (VRRM) ratings, the series supports high-voltage rectification across industrial, automotive, and energy infrastructure systems. Available in DPAK, D2-PAK, and TO-220AC packages, these devices enable flexible mechanical integration and effective thermal management in a wide range of high-power designs.
Built on advanced Gen4 Silicon Carbide technology, these devices deliver negligible reverse recovery charge (Qrr), low forward voltage drop (typ. ≤1.65V at rated current), and stable operation at elevated junction temperatures. As majority-carrier devices, SiC Schottky diodes eliminate minority carrier storage effects, reducing switching losses and enabling higher-frequency operation compared to conventional silicon rectifiers.
The Gen4 SiC Schottky Diode Series supports higher switching efficiency, lower thermal losses, and greater power density in demanding high-voltage applications.
Gen4 SiC Schottky Diodes
Features & Benefits:
- Negligible reverse recovery charge (Qrr), reducing switching losses in high-frequency circuits
- Low forward voltage drop (typ. ≤1.65V at rated current) to minimize conduction losses
- Fast switching performance enabling higher-frequency power stage design
- Positive temperature coefficient of forward voltage supporting thermal stability and helping prevent thermal runaway
- 650V and 1200V peak repetitive reverse voltage (VRRM) ratings for high-voltage rectification
- DPAK package for compact, space-constrained designs with effective PCB heat dissipation
- D2-PAK package for improved thermal performance in higher-power applications
- TO-220AC package as a through-hole option for robust mechanical mounting and low thermal resistance
Applications
The Gen4 SiC Schottky Diode Series is well suited for a wide range of high-voltage and high-efficiency power conversion designs. Its fast-switching performance, low losses, and robust thermal behavior make it an ideal choice across multiple power electronics verticals.
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Switching Power Supplies (SMPS) |
Power Factor Correction (PFC) |
Solar Inverters |
Industrial Power Systems |
High-Efficiency Rectifiers |
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Understanding SiC Schottky Structures
SiC Schottky diodes are available in multiple structural architectures optimized for different performance trade-offs, including SBD (Schottky Barrier Diode), JBS (Junction Barrier Schottky), and MPS (Merged PiN Schottky). Each structure balances efficiency, leakage control, and surge robustness differently depending on the application requirements.
To compare these architectures in detail and determine which structure best matches your operating conditions, explore our in-depth technical guide: Choosing the Right SiC Schottky Diode (SBD vs JBS vs MPS)
Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Average |
Peak Repetitive |
Forward |
At Rated Forward |
Reverse Voltage |
Datasheet |
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4 |
650 |
1.65 |
4 |
20 |
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10 |
1200 |
1.6 |
10 |
25 |
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30 |
650 |
1.6 |
30 |
25 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.
