MCC’s fourth-generation Silicon Carbide (SiC) Schottky Barrier Diodes address critical challenges in modern power electronics, including thermal management, board space constraints, and reliability under high switching frequencies and elevated temperatures.  

Built on MCC’s advanced SiC platform, these diodes combine low forward voltage (Vf) with ultra-low switching losses, minimizing conduction and switching dissipation to reduce heatsink requirements and increase power density. 

Key design advantages include: 

• Positive temperature coefficient for safe parallel operation and thermal stability 

• Negligible reverse recovery for clean, high-frequency switching with reduced EMI 

• Wide operating temperature range for consistent performance in demanding environments 

Available in 650 V and 1200 V ratings with 2 A and 4 A current options, housed in TO-220AC / ITO-220AC packages, these devices simplify mechanical integration and deliver robust performance for applications such as PFC stages, switching power supplies, motor drives, and traction systems.