AEC-Q101 Qualified Rectifiers with Zero Reverse Recovery in DPAK & TO-220AC Packages

MCC introduces the Gen4 1200V SiC Schottky Diode Series, an automotive-qualified family of Silicon Carbide (SiC) Schottky Barrier Diodes designed for high-efficiency power systems operating under demanding conditions. With zero reverse recovery current, eliminating reverse recovery losses and improving high-frequency efficiency, these devices help reduce switching losses and support higher switching frequencies compared to conventional silicon rectifiers, improving overall power density across automotive, industrial, and renewable energy applications.

Built on advanced Gen4 Junction Barrier Schottky (JBS) technology, the series delivers fast majority-carrier switching with improved leakage control and surge robustness. Devices offer forward voltage as low as 1.38 V at rated current, leakage current down to 0.1 µA at 25 °C, capacitive charge as low as 10.2 nC (typ.), and reliable operation across a wide −55 °C to +175 °C junction temperature range.

With AEC-Q101 qualification, high surge capability, and a positive temperature coefficient of forward voltage, the series delivers dependable operation in harsh automotive and industrial environments. Available in DPAK and TO-220AC packages, the Gen4 1200V SiC Schottky Diode Series enables more efficient, compact, and durable high-voltage power designs.

Gen4 1200V SiC Schottky Diodes AEC-Q101

Features & Benefits:

• Zero reverse recovery current, eliminating reverse recovery losses and improving high-frequency efficiency
• AEC-Q101 qualified, ensuring reliability for automotive and harsh-environment applications
• 1200V VRRM rating, supporting high-voltage rectification and power conversion architectures
• Forward voltage as low as 1.38 V, minimizing conduction losses and thermal stress
• Ultra-low leakage current (down to 0.1 µA) for improved high-temperature stability
• High surge capability up to 85 A, supporting demanding load transients
• Capacitive charge as low as 10.2 nC, reducing switching energy loss in fast-switching circuits
• Operating junction temperature range −55 °C to +175 °C, enabling high-temperature system design
• Positive temperature coefficient, helping prevent thermal runaway

SICU10120XG4JQ

SICU02120G4JQ

SIC10120G4JQ 

Applications

 These 1200V Gen4 SiC Schottky diodes are well suited for high-voltage, high-efficiency power applications requiring low switching loss, high thermal stability, and long-term reliability.  

Understanding Gen4 SiC Schottky Technology 

The Gen4 1200V SiC Schottky series is built on advanced Junction Barrier Schottky (JBS) architecture, combining fast majority-carrier conduction with improved electric field control and leakage suppression. Unlike conventional silicon rectifiers, SiC Schottky devices eliminate minority carrier storage effects, resulting in negligible reverse recovery charge and significantly reduced switching losses.

Gen4 technology further enhances high-temperature stability and surge robustness, supporting operation from −55 °C to +175 °C with ultra-low leakage current and a positive temperature coefficient of forward voltage. This enables higher efficiency, improved thermal margins, and greater reliability in automotive, industrial, and renewable energy systems.

To better understand how SBD, JBS, and MPS SiC structures differ and how to select the right architecture for your application, click here to explore our in-depth technical guide: Choosing the Right SiC Schottky Diode (SBD vs JBS vs MPS)

Product Attributes, Parametrics & Datasheet

Now available, purchase directly from MCC or through our authorized distributors.  

For technical inquiries or sample requests, contact MCC for support.