---
title: MCC Introduces 650V–1200V Gen4 SiC Schottky Barrier Rectifiers
description: MCC introduces Gen4 SiC Schottky Barrier Rectifiers rated 650V–1200V with zero reverse recovery and low forward voltage in TO-247AB and TO-247AD packages.
image: https://solutions.mccsemi.com/hubfs/MCC%20Introduces%20650V%E2%80%931200V%20Gen4%20SiC%20Schottky%20Barrier%20Rectifiers%20%20-%20mcc%20semi%20-%201080x400.png
---
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# MCC Introduces 650V–1200V Gen4 SiC Schottky Barrier Rectifiers
# MCC Introduces 650V–1200V Gen4 SiC Schottky Barrier Rectifiers
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
by [MCC](https://solutions.mccsemi.com/news/author/mcc)
March 25, 2026
## Zero Reverse Recovery and Low Forward Voltage in TO-247AB and TO-247AD Packages
MCC introduces the SICW Series Gen4 SiC Schottky Barrier Rectifiers, designed to reduce switching losses, improve thermal performance, and increase efficiency in high-voltage power systems. Built on MCC’s Gen4 JBS SiC technology, the SICW Series combines zero reverse recovery behavior with a low forward voltage drop of 1.45V to 1.6V, significantly reducing switching and conduction losses in high‑frequency applications.
Rated from 650V to 1200V and 10A to 40A, the SICW Series supports high power density and stable operation across a wide operating range. A positive temperature coefficient of forward voltage enables reliable parallel operation, while a maximum junction temperature of 175 °C improves thermal robustness and reduces cooling requirements.
Housed in TO‑247AB and TO‑247AD packages with a large heat‑dissipation tab, the SICW Series delivers high power handling and easy system integration. These features make it a strong solution for compact, efficient, and reliable power conversion in demanding industrial, transportation, and energy applications.
650V–1200V Gen4 SiC SBD
##### Features & Benefits:
- Zero reverse recovery current, eliminating reverse recovery losses and improving conversion efficiency
- Positive temperature coefficient of forward voltage (Vf), enabling thermal stability and reliable parallel operation
- High‑speed switching performance optimized for high‑frequency power circuits
- Low forward voltage drop of 1.45V to 1.6V, reducing conduction losses
- High junction temperature capability with Tj max of 175 °C for increased system ruggedness
- High power handling supported by a large metal tab for efficient heatsink attachment
- Available in TO‑247AB and TO‑247AD packages with a common footprint for easy design‑in
[SICW30120DG4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicw30120dg4j)
[SICW4065DG4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicw4065dg4j)
[SICW40120DG4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicw40120dg4j)
[SICWT3065G4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt3065g4j)
[SICWT1065G4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt1065g4j)
[SICWT20120G4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt20120g4j)
## Product Highlights
650V–1200V Gen4 SiC SBD
### 1
###### Gen4 SiC Performance
Built on Gen4 JBS SiC technology, the SICW Series delivers zero reverse recovery behavior and superior material performance, enabling higher switching speeds, lower losses, and increased power density compared to silicon‑based solutions.
650V–1200V Gen4 SiC SBD
### 2
###### Higher System Efficiency
Ultra‑low forward voltage drop of 1.45V to 1.6V combined with zero reverse recovery current significantly reduces conduction and switching losses, improving overall power conversion efficiency.
650V–1200V Gen4 SiC SBD
### 3
###### Improved Thermal Reliability
A positive temperature coefficient of forward voltage and a maximum junction temperature of 175 °C promote thermal stability, reliable parallel operation, and robust performance in harsh operating conditions.
650V–1200V Gen4 SiC SBD
### 4
###### Simplified Design and Higher Power Density
High‑speed switching capability and TO‑247AB/TO‑247AD packages with strong heat dissipation support compact designs, reduced cooling requirements, and easier integration into high‑power applications.
## Applications
The SICW Series Gen4 SiC Schottky Barrier Rectifiers are well suited for a wide range of high‑voltage, high‑frequency power conversion applications. Their zero reverse recovery behavior, low conduction losses, and high‑temperature capability enable efficient, reliable operation across multiple industry verticals.
|  |  |  |  |
| --- | --- | --- | --- |
| **Industrial Power & Automation** | **Transportation & Mobility ** | **Energy & Infrastructure ** | **Commercial & Consumer Power ** |
| - Switched-Mode Power Supplies (SMPS) for industrial equipment - AC-DC and DC-DC power converters - Power Factor Correction (PFC) stages in industrial power systems - Servo drives and variable frequency drives (VFDs) | - Auxiliary power converters in transportation systems - High-voltage DC-DC converters for rail and mobility platforms - Power conversion systems for rail and light-rail infrastructure | - EV charging systems and charging modules - Fast DC chargers for electric vehicles - Renewable energy inverters and power conditioning systems - Power distribution and conversion units | - High-efficiency SMPS for data centers and telecom equipment - PFC circuits in server and networking power supplies - UPS systems and backup power solutions - High-frequency adapters and battery chargers |
## Understanding Gen4 SiC Technology
The SICW Series is built on MCC’s Gen4 Junction Barrier Schottky (JBS) Silicon Carbide technology, designed to improve efficiency, switching performance, and thermal reliability in high-voltage power conversion systems.
Compared with conventional silicon rectifiers, SiC Schottky devices operate with virtually zero reverse recovery current, eliminating a major source of switching losses in high-frequency power circuits. This allows designers to increase switching frequency, reduce heat generation, and improve overall system efficiency.
MCC’s Gen4 SiC platform further optimizes the JBS structure, balancing low forward voltage with strong blocking capability and stable leakage characteristics at elevated temperatures. The result is improved efficiency under real operating conditions and greater reliability in demanding power environments.
These material and device improvements make Gen4 SiC rectifiers particularly well suited for modern power architectures such as PFC stages, high-frequency SMPS, EV charging systems, renewable energy converters, and industrial motor drives, where efficiency and thermal performance are critical.
To learn more about SiC diode structures, performance characteristics, and how to select the right device for your design, read the full guide:[Choosing the Right SiC Schottky Diode](https://solutions.mccsemi.com/choosing-the-right-sic-schottky)
## Product Attributes, Parametrics & Datasheet
| Product | Type | Package | Average Forward Current IF(AV)(A) | Peak Repetitive Reverse Voltage VRRM (V) | Forward Voltage VF (V) \[max\]@IF(A) | At Rated Forward Current IF (A) | Peak Forward Surge Current IFSM (A) | Datasheet |
| --- | --- | --- | --- | --- | --- | --- | --- | --- |
| [SICW30120DG4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicw30120dg4j) | SiC Schottky Barrier Diodes | TO-247AB | 30 | 1200 | 1.45 | 15 | 160 | [Info](https://www.mccsemi.com/pdf/products/SICW30120DG4J(TO-247AB).pdf) |
| [SICW4065DG4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicw4065dg4j) | SiC Schottky Barrier Diodes | TO-247AB | 40 | 650 | 1.5 | 20 | 135 | [Info](https://www.mccsemi.com/pdf/products/SICW4065DG4J(TO-247AB).pdf) |
| [SICW40120DG4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicw40120dg4j) | SiC Schottky Barrier Diodes | TO-247AB | 40 | 1200 | 1.6 | 20 | 160 | [Info](https://www.mccsemi.com/pdf/products/SICW40120DG4J(TO-247AB).pdf) |
| [SICWT3065G4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt3065g4j) | SiC Schottky Barrier Diodes | TO-247AD | 30 | 650 | 1.58 | 30 | 200 | [Info](https://www.mccsemi.com/pdf/products/SICWT3065G4J(TO-247AD).pdf) |
| [SICWT1065G4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt1065g4j) | SiC Schottky Barrier Diodes | TO-247AD | 10 | 650 | 1.6 | 10 | 75 | [Info](https://www.mccsemi.com/pdf/products/SICWT1065G4J(TO-247AD).pdf) |
| [SICWT20120G4J](https://www.mccsemi.com/products/silicon-carbide-sic/sic-schottky-barrier-diodes-sbds/sicwt20120g4j) | SiC Schottky Barrier Diodes | TO-247AD | 20 | 1200 | 1.6 | 20 | 150 | [Info](https://www.mccsemi.com/pdf/products/SICWT20120G4J(TO-247AD).pdf) |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, [contact MCC](https://solutions.mccsemi.com/news/mcc-introduces-650v-1200v-gen4-sic-schottky-barrier-rectifiers#hs-chat-open) for support.
###### Tags:
[New Product Introductions,](https://solutions.mccsemi.com/news/tag/new-product-introductions) [News,](https://solutions.mccsemi.com/news/tag/news) [Schottky Barrier Rectifers](https://solutions.mccsemi.com/news/tag/schottky-barrier-rectifers)
#### Related Content
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#### [MCC Introduces 1200V Gen6 SiC Schottky Diode in TO-247AD for High-Power Rectification](https://solutions.mccsemi.com/news/mcc-introduces-1200v-gen6-sic-schottky-diode-in-to-247ad-for-high-power-rectification)
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#### [MCC Introduces Gen4 SiC Schottky Diodes for High-Voltage Efficiency](https://solutions.mccsemi.com/news/mcc-introduces-gen4-sic-schottky-diodes-for-high-voltage-efficiency)
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February 24, 2026
#### [MCC Introduces High-Efficiency 1200V Gen4 SiC Schottky Diodes for Automotive Power Systems](https://solutions.mccsemi.com/news/mcc-introduces-high-efficiency-1200v-gen4-sic-schottky-diodes-for-automotive-power-systems)
[](https://solutions.mccsemi.com/news/high-efficiency-1200v-sic-schottky-barrier-diode-for-high-power-industrial-applications)
August 14, 2026
#### [High-Efficiency 1200V SiC Schottky Barrier Diode for High-Power Industrial Applications](https://solutions.mccsemi.com/news/high-efficiency-1200v-sic-schottky-barrier-diode-for-high-power-industrial-applications)
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
Post by [MCC](https://solutions.mccsemi.com/news/author/mcc)
March 25, 2026
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