Zero Reverse Recovery and Low Forward Voltage in TO-247AB and TO-247AD Packages

MCC introduces the SICW Series Gen4 SiC Schottky Barrier Rectifiers, designed to reduce switching losses, improve thermal performance, and increase efficiency in high-voltage power systems. Built on MCC’s Gen4 JBS SiC technology, the SICW Series combines zero reverse recovery behavior with a low forward voltage drop of 1.45V to 1.6V, significantly reducing switching and conduction losses in high‑frequency applications.

Rated from 650V to 1200V and 10A to 40A, the SICW Series supports high power density and stable operation across a wide operating range. A positive temperature coefficient of forward voltage enables reliable parallel operation, while a maximum junction temperature of 175 °C improves thermal robustness and reduces cooling requirements.

Housed in TO‑247AB and TO‑247AD packages with a large heat‑dissipation tab, the SICW Series delivers high power handling and easy system integration. These features make it a strong solution for compact, efficient, and reliable power conversion in demanding industrial, transportation, and energy applications.

650V–1200V Gen4 SiC SBD

Features & Benefits:

• Zero reverse recovery current, eliminating reverse recovery losses and improving conversion efficiency
• Positive temperature coefficient of forward voltage (Vf), enabling thermal stability and reliable parallel operation
• High‑speed switching performance optimized for high‑frequency power circuits
• Low forward voltage drop of 1.45V to 1.6V, reducing conduction losses
• High junction temperature capability with Tj max of 175 °C for increased system ruggedness
• High power handling supported by a large metal tab for efficient heatsink attachment
• Available in TO‑247AB and TO‑247AD packages with a common footprint for easy design‑in

SICW30120DG4J

SICW4065DG4J

SICW40120DG4J

SICWT3065G4J

SICWT1065G4J

SICWT20120G4J

Applications 

The SICW Series Gen4 SiC Schottky Barrier Rectifiers are well suited for a wide range of high‑voltage, high‑frequency power conversion applications. Their zero reverse recovery behavior, low conduction losses, and high‑temperature capability enable efficient, reliable operation across multiple industry verticals. 

Understanding Gen4 SiC Technology  

The SICW Series is built on MCC’s Gen4 Junction Barrier Schottky (JBS) Silicon Carbide technology, designed to improve efficiency, switching performance, and thermal reliability in high-voltage power conversion systems.

Compared with conventional silicon rectifiers, SiC Schottky devices operate with virtually zero reverse recovery current, eliminating a major source of switching losses in high-frequency power circuits. This allows designers to increase switching frequency, reduce heat generation, and improve overall system efficiency.

MCC’s Gen4 SiC platform further optimizes the JBS structure, balancing low forward voltage with strong blocking capability and stable leakage characteristics at elevated temperatures. The result is improved efficiency under real operating conditions and greater reliability in demanding power environments.

These material and device improvements make Gen4 SiC rectifiers particularly well suited for modern power architectures such as PFC stages, high-frequency SMPS, EV charging systems, renewable energy converters, and industrial motor drives, where efficiency and thermal performance are critical.

To learn more about SiC diode structures, performance characteristics, and how to select the right device for your design, read the full guide: Choosing the Right SiC Schottky Diode

Product Attributes, Parametrics & Datasheet

Now available, purchase directly from MCC or through our authorized distributors. 

For technical inquiries or sample requests, contact MCC for support.