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SICWT15120G5M-BP 1200V SiC Schottky Barrier Diode Featuring Zero Reverse Recovery, Low Forward Voltage, and Rugged TO-247AD Packaging
Micro Commercial Components (MCC) introduces the SICWT15120G5M-BP, a high-performance 1200V Silicon Carbide (SiC) SBD designed to improve efficiency, thermal performance, and reliability in demanding high-power conversion systems. As modern power electronics continue to increase switching frequencies and operating temperatures, engineers require power devices that minimize switching losses while maintaining stable performance under extreme electrical and thermal conditions.
Built using advanced Merged PiN Schottky (MPS) technology, the SICWT15120G5M-BP combines the fast-switching advantages of a Schottky diode with enhanced surge robustness and leakage current control. The device features 1200V reverse voltage capability, up to 45A continuous forward current, 180A surge current capability, zero reverse recovery current, low forward voltage of 1.6V, and a maximum junction temperature of 175°C. Housed in the rugged TO-247AD package, it enables designers to improve system efficiency, increase power density, and simplify thermal management in industrial power supplies, renewable energy systems, motor drives, traction systems, and charging pile.
1200V Silicon Carbide Schottky Barrier Diode (SiC SBD)
Features & Benefits:
- 1200V Reverse Voltage (VRRM): Supports high-voltage power conversion with improved system efficiency
- Merged PiN Schottky (MPS) Technology: Reduces switching losses while delivering excellent surge capability
- Zero Reverse Recovery Current: Eliminates reverse recovery losses for higher switching efficiency
- Low Forward Voltage: Maximum VF of 1.6V minimizes conduction losses and improves power efficiency
- Low Leakage Current: Maximum IR of 25µA
- High Surge Current Capability: 180A IFSM enhances robustness against inrush and transient conditions
- High Junction Temperature: Supports operation up to 175°C for reliable performance in demanding environments
- TO-247AD Package: Standard package simplifies heatsink attachment and thermal management
- RoHS Compliant: Supports environmentally responsible electronic product design
Applications
The SICWT15120G5M-BP is designed for high-voltage power conversion applications requiring low switching losses, high-temperature operation, and long-term reliability. Its advanced SiC MPS technology and rugged TO-247AD package make it well suited for industrial, renewable energy, and transportation power systems.
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Industrial Power Systems
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Power Conversion
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Renewable Energy |
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Motor Drive & Traction
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EV Charging Infrastructure
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
VRRM (V) |
IF (A) |
VF [max] (V) |
IFSM(A) |
IR (µA) [max] |
Datasheet |
| SICWT15120G5M-BP |
TO-247AD |
1200 |
15 |
1.60 |
180 |
25 |
Now available, purchase directly from MCC or through our authorized distributors.
To learn more about selecting the right Silicon Carbide (SiC) Schottky Barrier Diode for your application, explore our Engineer's Guide to Choosing the Right SiC Schottky Diode. The guide covers key selection criteria, performance advantages, and practical design considerations for high-efficiency power conversion systems.
For technical inquiries or sample requests, contact MCC for support.