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AEC-Q101 Qualified SICX0165G4JQ Silicon Carbide Schottky Barrier Diode (SiC SBD) Featuring Zero Reverse Recovery, Low Forward Voltage, and Compact SMA Packaging for High-Frequency Power Systems
Micro Commercial Components (MCC) introduces the SICX0165G4JQ-TP, an AEC-Q101 qualified 650V, 1A Silicon Carbide (SiC) Schottky Barrier Diode designed to deliver high efficiency and reliable performance in compact, high-voltage power conversion systems. As automotive and industrial power electronics continue to demand higher switching frequencies, greater efficiency, and increased power density, engineers require rectifier solutions that minimize switching losses while maintaining excellent thermal performance and long-term reliability.
The SICX0165G4JQ-TP addresses these challenges by combining a 650V reverse voltage rating with a 1A average forward current capability in a compact SMA package. Built on advanced Silicon Carbide technology, the device features zero reverse recovery current, a low forward voltage of only 1.3V, high surge current capability of 18A, and a maximum junction temperature of 175°C. Its positive temperature coefficient further enhances thermal stability and simplifies parallel operation. These characteristics make it well suited for switching mode power supplies (SMPS), power factor correction (PFC), automotive auxiliary power supplies, EV charging systems, motor drives, and solar inverters.
650V AEC-Q101 Silicon Carbide Schottky Barrier Diode (SiC SBD)
Features & Benefits:
- AEC-Q101 Qualified: Automotive-grade reliability for demanding electrical, thermal, and environmental operating conditions.
- 650V Reverse Voltage Rating: Provides reliable high-voltage blocking capability for automotive, industrial, and renewable energy power systems.
- Zero Reverse Recovery Current: Eliminates reverse recovery losses, reducing switching losses and EMI while improving overall conversion efficiency.
- Low Forward Voltage: Maximum VF of only 1.3V minimizes conduction losses and improves power conversion efficiency.
- High Surge Current Capability: IFSM up to 18A withstands inrush currents and transient overload conditions, improving system robustness.
- Positive Temperature Coefficient: Forward voltage naturally increases with temperature, promoting improved current sharing and easier parallel operation.
- High Junction Temperature: Supports operation up to 175°C, enabling reliable performance in harsh operating environments while reducing cooling requirements.
- Compact SMA Package: Enables space-saving PCB layouts while providing reliable thermal performance for compact power designs.
- RoHS Compliant: Supports environmentally responsible electronic product development.
Applications
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Automotive Electronics
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Industrial Power Systems
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Power Conversion
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Renewable Energy
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Product Attributes, Parametrics & Datasheet
|
Product |
Type |
Package |
VRRM (V) |
IF (A) |
VF [max] (V) |
IFSM(A) |
IR (µA) [max] |
Datasheet |
| SICX0165G4JQ-TP |
SMA |
650 |
1 |
1.3 |
18 |
0.5 |
Now available, purchase directly from MCC or through our authorized distributors.
To learn more about selecting the right Silicon Carbide (SiC) Schottky Barrier Diode for your application, explore our Engineer's Guide to Choosing the Right SiC Schottky Diode. It covers key selection criteria, performance advantages, and practical design considerations for high-efficiency power conversion systems.
For technical inquiries or sample requests, contact MCC for support.
