Minimize Conduction & Switching Losses in Compact DFN8080A Package
MCC Semi is thrilled to introduce our first high-voltage MOSFET with Kelvin source pin in the compact DFN8080A package. Designed to help engineers balance costs and performance, the 600V MSJL120N60FH leverages superjunction technology and an integrated FRED body diode to facilitate high-speed switching and recovery.
Its low gate charge and RDS(on) of only 100Ω (typ.) significantly improve switching speeds and reduce losses in a range of demanding applications. Featuring junction-to-case thermal resistance of 0.47K/W, this MOSFET assures reliable operation in high-temp environments, making it an intelligent choice for motor drives, solar inverters, industrial controllers, and power supplies.
With a height of less than 1mm, its low-profile DFN8080A package is well-suited for high-frequency applications where space is limited, and performance is mission-critical.
For engineers looking to boost efficiency and minimize losses, MSJL120N60FH boasts the perfect combination of features for high-voltage, space-constrained scenarios.
Features & Benefits:
- Superjunction technology: Enhances efficiency by reducing on-state resistance.
- Low on-resistance: Minimizes power dissipation at 100mΩ (typ.).
- Low conduction losses: Improves overall system efficiency.
- Low gate charge: Facilitates increased switching speeds.
- Kelvin source pin: Dramatically reduces switching losses while enhancing efficiency.
- Excellent thermal resistance: Junction-to-case thermal resistance of 0.47K/W ensures stable operation amid demanding conditions.
- Integrated FRED body diode: Reduces reverse recovery time for improved switching.
- High-speed switching: Optimal for high-frequency applications.
- Compact package size: DFN8080A package with a low-profile height of less than 1mm, perfect for space-constrained designs.
Product Highlights
Modern high-voltage applications have met their match in our latest MOSFET, complete with the features and characteristics required to deliver efficiency and reliability while maintaining a small design footprint.
High-Performance + Minimal Losses: 600V MOSFET with Integrated FRED & Kelvin Source Pin
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Enhanced Efficiency
Our superjunction MOSFET features a Kelvin source pin and RDS(on) of only 100Ω, ensuring significantly lower conduction and switching losses while enhancing overall efficiency.
High-Performance + Minimal Losses: 600V MOSFET with Integrated FRED & Kelvin Source Pin
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Fast Switching Speeds
With a low gate charge and integrated FRED body diode, this component facilitates faster switching, making it ideal for high-frequency applications.
High-Performance + Minimal Losses: 600V MOSFET with Integrated FRED & Kelvin Source Pin
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Compact Design
The low-profile DFN8080A boasts a height of less than 1mm, enabling engineers to design more compact and streamlined devices without sacrificing performance.
High-Performance + Minimal Losses: 600V MOSFET with Integrated FRED & Kelvin Source Pin
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Improved Thermal Performance
Superior junction-to-case thermal resistance of 0.47K/W enables effective heat dissipation, enhancing reliability and performance in demanding industrial environments.
Applications
Our advanced 600V MOSFET was engineered to address the needs of diverse yet challenging industries and applications.
Power Supply & Conversion |
Motor Control |
Renewable Energy |
Industrial Automation |
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Product Attributes, Parametrics & Datasheet
Product |
Type |
Package |
Drain-Source Voltage VDS |
Drain-Source On-Resistance RDS(ON) |
Mounting Type |
Datasheet |
N-Channel Power MOSFET |
DFN8080A |
600V |
100mΩ |
Surface-Mount (SMD) |