Low 8.5 mΩ RDS(on) and 50A Current Capability in a PDFN5060-8D Package
MCC introduces the MCACD8D5N06YL, a dual N-channel MOSFET array designed for high-current power switching in space-constrained designs. By integrating two matched 60 V MOSFETs into a single PDFN5060-8D package, the device reduces component count, simplifies gate drive routing, and enables more compact and efficient power stage layouts while maintaining strong current capability and thermal performance.
With a low 8.5 mΩ RDS(on) and split-gate trench technology, the MCACD8D5N06YL minimizes both conduction and switching losses to improve overall system efficiency. The matched device characteristics within the dual configuration support balanced current sharing and more predictable switching behavior, which is critical in synchronous designs and parallel power stages. Supporting up to 50 A continuous drain current, it enables reliable operation under demanding load conditions while reducing overall design complexity.
The thermally efficient PDFN5060-8D package enhances heat transfer through a low-resistance thermal path, supporting stable junction temperatures in high-density layouts. This combination of electrical and thermal performance makes the device well suited for DC-DC converters, load switching, and motor control applications across consumer and industrial systems.
Features & Benefits:
- Dual N-channel MOSFET array integrating two matched power switches in a single package
- Split-gate trench MOSFET technology optimized for low switching losses
- Low RDS(on) of 8.5 mΩ (max) at VGS = 10 V
- 60 V drain-source voltage (VDS) rating
- Up to 50 A continuous drain current (TC)
- 56 W maximum power dissipation
- PDFN5060-8D surface-mount package for compact, high-density layouts
- Strong thermal performance for reliable high-power operation
Product Highlights
60V Dual N-Channel MOSFET
1
Reduced PCB Footprint
60V Dual N-Channel MOSFET
2
High System Efficiency
60V Dual N-Channel MOSFET
3
Robust Power Handling
60V Dual N-Channel MOSFET
4
Improved Thermal Performance
Applications
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Consumer Electronics
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Industrial Systems
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Telecommunications Infrastructure |
General Power Conversion |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Channel |
Number of Functions |
Drain-Source |
Gate-Source |
Drain |
Drain-Source |
Datasheet |
|
Power MOSFET |
PDFN5060-8D |
N+P |
Dual |
60 |
±20 |
50 |
0.0085 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.



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