---
title: MCC Introduces High‑Efficiency 60V N‑Channel Power MOSFET for Compact Designs
description: High-efficiency 60V N-channel MOSFET with 6.3 mΩ RDS(on) in a compact PDFN5060-8D package. Designed for SMPS, battery systems, industrial motor drives, and server power.
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---
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# MCC Introduces High‑Efficiency 60V N‑Channel Power MOSFET for Compact Designs
# MCC Introduces High‑Efficiency 60V N‑Channel Power MOSFET for Compact Designs
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
by [MCC](https://solutions.mccsemi.com/news/author/mcc)
March 27, 2026
## Ultra‑Low 6.3 mΩ RDS(on) in a PDFN5060‑8D Package for High Power Density
MCC introduces the [MCACD6D3N06Y](https://www.mccsemi.com/products/mosfets/power-mosfets/mcacd6d3n06y), a high‑performance 60 V N‑Channel MOSFET designed to address the common challenges of conduction loss, heat dissipation, and limited board space in high‑power designs. By combining an ultra‑low maximum RDS(on) of 6.3 mΩ with a compact PDFN5060‑8D package and low 1.6 °C/W junction‑to‑case thermal resistance, the device helps reduce power loss, simplify thermal management, and increase power density in space‑constrained systems.
Built on advanced split‑gate trench MOSFET technology, the MCACD6D3N06Y delivers fast switching performance and reliable efficiency for demanding power applications. Its 60 V drain‑source rating provides ample margin for 48 V systems, while the exposed‑pad package and 175 °C maximum junction temperature support stable operation in high‑power industrial and commercial environments.
[60V N‑Channel Power MOSFET](https://www.mccsemi.com/products/mosfets/power-mosfets/mcacd6d3n06y)
##### Features & Benefits:
- Split‑gate trench MOSFET technology optimized for low on‑resistance and fast switching speed
- Ultra‑low RDS(on) of 6.3 mΩ (max at VGS = 10 V) to minimize conduction losses and improve efficiency
- 60 V drain‑source voltage (VDS) rating providing sufficient margin for voltage transients in 48 V battery‑powered systems
- Low thermal resistance of 1.6 °C/W (junction‑to‑case) enabling efficient heat dissipation and reliable high‑power operation
- Extended maximum junction temperature of 175 °C suitable for demanding industrial environments
- Compact PDFN5060‑8D package designed for high power density, featuring a large exposed bottom thermal pad for improved thermal performance
- Excellent mechanical robustness and SMT compatibility, supporting automated assembly processes
[MCACD6D3N06Y](https://www.mccsemi.com/products/mosfets/power-mosfets/mcacd6d3n06y)
## Product Highlights
60V N‑Channel Power MOSFET
### 1
###### High Power Efficiency
Ultra‑low RDS(on) of 6.3 mΩ significantly reduces conduction losses, resulting in lower power dissipation and higher efficiency, especially in high‑current applications.
60V N‑Channel Power MOSFET
### 2
###### Improved Thermal Performance
Low junction‑to‑case thermal resistance combined with an exposed‑pad PDFN5060‑8D package enables efficient heat transfer, helping maintain stable operation under high power and elevated temperatures.
60V N‑Channel Power MOSFET
### 3
###### Compact Power Density
The compact PDFN5060‑8D package allows designers to achieve higher power density, making it ideal for space‑constrained designs without compromising electrical or thermal performance.
60V N‑Channel Power MOSFET
### 4
###### Robust Operating Margin
A 60 V drain‑source rating and a maximum junction temperature of 175 °C provide strong reliability margins, ensuring dependable operation in industrial and 48 V battery‑based systems.
## Applications
The MCACD6D3N06Y is well suited for a wide range of high‑efficiency power applications where low conduction loss, compact size, and strong thermal performance are critical. Its electrical and thermal characteristics make it an excellent choice for industrial, computing, energy storage, and aerial platform power designs.
|  |  |  |  |
| --- | --- | --- | --- |
| **Power Supply & Energy Conversion ** | **Battery Systems & Energy Storage ** | **Industrial Automation & Motor Control ** | **Data Center & Computing Infrastructure ** |
| - Switched-mode power supplies (SMPS) - DC-DC converters for distributed power architectures | - Battery management systems (BMS) - Low-voltage drone and UAV power systems - Battery protection and load switching circuits | - Industrial motor drives and control systems - Factory automation power stages | - Power path management using OR-ing configurations for server backplanes - Redundant power supply architectures for servers and storage systems |
## Product Attributes, Parametrics & Datasheet
| Product | Type | Package | Channel | Drain-Source Voltage VDS (V) | Gate-Source Voltage VGS (V) | Drain Current ID (A) | Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) | Datasheet |
| --- | --- | --- | --- | --- | --- | --- | --- | --- |
| [MCACD6D3N06Y](https://www.mccsemi.com/products/mosfets/power-mosfets/mcacd6d3n06y) | Power MOSFET | PDFN5060-8D | N+N | 60 | ±20 | 60 | 0.0063 | [Info](https://www.mccsemi.com/pdf/products/MCACD6D3N06Y(PDFN5060-8D).pdf) |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, [contact MCC](https://solutions.mccsemi.com/news/mcc-introduces-high-efficiency-60v-n-channel-power-mosfet-for-compact-designs#hs-chat-open) for support.
###### Tags:
[New Product Introductions,](https://solutions.mccsemi.com/news/tag/new-product-introductions) [News,](https://solutions.mccsemi.com/news/tag/news) [MOSFETs](https://solutions.mccsemi.com/news/tag/mosfets)
#### Related Content
[%20(3).png)](https://solutions.mccsemi.com/news/mcc-introduces-a-60v-dual-n-channel-mosfet-array-for-compact-power-designs)
May 1, 2026
#### [MCC Introduces a 60V Dual N-Channel MOSFET Array for Compact Power Designs](https://solutions.mccsemi.com/news/mcc-introduces-a-60v-dual-n-channel-mosfet-array-for-compact-power-designs)
[](https://solutions.mccsemi.com/news/mcc-introduces-a-high-efficiency-60v-n-channel-power-mosfet-for-compact-high-current-designs)
September 8, 2026
#### [MCC Introduces a High-Efficiency 60V N-Channel Power MOSFET for Compact High-Current Designs](https://solutions.mccsemi.com/news/mcc-introduces-a-high-efficiency-60v-n-channel-power-mosfet-for-compact-high-current-designs)
[](https://solutions.mccsemi.com/news/mcc-introduces-a-compact-60-v-n-channel-power-mosfet-for-high-current-designs)
April 3, 2026
#### [MCC Introduces a Compact 60 V N-Channel Power MOSFET for High-Current Designs](https://solutions.mccsemi.com/news/mcc-introduces-a-compact-60-v-n-channel-power-mosfet-for-high-current-designs)
[](https://solutions.mccsemi.com/news/40v-n-channel-power-mosfet-in-pdfn5060-for-high-efficiency-power-conversion)
September 23, 2026
#### [40V N-Channel Power MOSFET in PDFN5060 for High-Efficiency Power Conversion](https://solutions.mccsemi.com/news/40v-n-channel-power-mosfet-in-pdfn5060-for-high-efficiency-power-conversion)
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
Post by [MCC](https://solutions.mccsemi.com/news/author/mcc)
March 27, 2026
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