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Ultra‑Low 6.3 mΩ RDS(on) in a PDFN5060‑8D Package for High Power Density
MCC introduces the MCACD6D3N06Y, a high‑performance 60 V N‑Channel MOSFET designed to address the common challenges of conduction loss, heat dissipation, and limited board space in high‑power designs. By combining an ultra‑low maximum RDS(on) of 6.3 mΩ with a compact PDFN5060‑8D package and low 1.6 °C/W junction‑to‑case thermal resistance, the device helps reduce power loss, simplify thermal management, and increase power density in space‑constrained systems.
Built on advanced split‑gate trench MOSFET technology, the MCACD6D3N06Y delivers fast switching performance and reliable efficiency for demanding power applications. Its 60 V drain‑source rating provides ample margin for 48 V systems, while the exposed‑pad package and 175 °C maximum junction temperature support stable operation in high‑power industrial and commercial environments.
Features & Benefits:
- Split‑gate trench MOSFET technology optimized for low on‑resistance and fast switching speed
- Ultra‑low RDS(on) of 6.3 mΩ (max at VGS = 10 V) to minimize conduction losses and improve efficiency
- 60 V drain‑source voltage (VDS) rating providing sufficient margin for voltage transients in 48 V battery‑powered systems
- Low thermal resistance of 1.6 °C/W (junction‑to‑case) enabling efficient heat dissipation and reliable high‑power operation
- Extended maximum junction temperature of 175 °C suitable for demanding industrial environments
- Compact PDFN5060‑8D package designed for high power density, featuring a large exposed bottom thermal pad for improved thermal performance
- Excellent mechanical robustness and SMT compatibility, supporting automated assembly processes
Applications
The MCACD6D3N06Y is well suited for a wide range of high‑efficiency power applications where low conduction loss, compact size, and strong thermal performance are critical. Its electrical and thermal characteristics make it an excellent choice for industrial, computing, energy storage, and aerial platform power designs.
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Power Supply & Energy Conversion
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Battery Systems & Energy Storage
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Industrial Automation & Motor Control
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Data Center & Computing Infrastructure |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Channel |
Drain-Source |
Gate-Source |
Drain |
Drain-Source |
Datasheet |
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Power MOSFET |
PDFN5060-8D |
N+N |
60 |
±20 |
60 |
0.0063 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.
