.png?width=50&height=50&name=mcc%20150x150%20(1).png)
650V SiC MOSFETs with High-Current Capability in TO247 Package
MCC Semi is expanding our advanced silicon carbide portfolio with six new 650V SiC MOSFETs. Designed for demanding applications, these components boast high-voltage capability and an on-resistance range of 25 mΩ to 100 mΩ. They’re also equipped with avalanche ruggedness, low switching losses, and enable high-speed switching with a low gate charge.
Their efficiency-boosting design and TO247 package deliver superior thermal performance, while the 3-pin or 4-pin (Kelvin-source pin) options enhance their versatility.
Our new MOSFETs minimize losses without compromising power handling, making them an intelligent choice for various industrial and telecommunications systems.
Features & Benefits:
- High switching speed with low gate charge
- Low switching losses
- Wide on-resistance selection ranging from 25 mΩ to 100 mΩ
- Avalanche ruggedness for enhanced durability
- TO247 3-pin and 4-pin package options
- Kelvin-source connection for precision (4-pin only)
Applications
When reliability and performance matter, our SiC MOSFETs meet the demands of diverse industries and applications, from industrial and telecommunications to renewable energy.
|
|
|
|
|
|
Telecommunications |
UPS Systems |
Renewable Energy |
Power Supplies |
|
|
|
|
Product Attributes, Parametrics & Datasheets
|
Product |
Type |
Package |
Drain-Source |
Drain-Source |
Mounting Type |
Datasheet |
|
SiC N-Channel MOSFET |
TO-247-4 |
650V |
25mΩ |
Through-hole |
||
|
SiC N-Channel MOSFET |
TO-247-4 |
650V |
50mΩ |
Through-hole |
||
|
SiC N-Channel MOSFET |
TO-247AB |
650V |
50mΩ |
Through-hole |
||
|
SiC N-Channel MOSFET |
TO-247AB |
650V |
25mΩ |
Through-hole |
||
|
SiC N-Channel MOSFET |
TO-247-4 |
650V |
100mΩ |
Through-hole |
||
|
SiC N-Channel MOSFET |
TO-247AB |
650V |
100mΩ |
Through-hole |
Contact MCC to request a sample or ask a question.
