---
title: MCC Amplifies Performance with 1200V SiC MOSFETs in TO-247 Packages
description: MCC launches ten 1200V SiC MOSFETs in a range of TO-247 packages. These components deliver enhanced efficiency and performance in multiple RDS(on) options.
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---
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# MCC Amplifies Performance with 1200V SiC MOSFETs in TO-247 Packages
# MCC Amplifies Performance with 1200V SiC MOSFETs in TO-247 Packages
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
by [MCC](https://solutions.mccsemi.com/news/author/mcc)
July 26, 2024
## Leveraging Efficiency, Ruggedness & Design Flexibility
MCC is thrilled to introduce the latest additions to our robust portfolio: Ten 1200V SiC N-channel MOSFETs in versatile TO-247-4, TO-247-4L, and TO-247AB packages. Our new MOSFETs are available in 3-pin and 4-in (Kelvin source) configurations and meet the rising demand for high-power, high-voltage applications.
Boasting exceptional on-resistance values from 21mΩ to 120mΩ (typ.) and fast switching speeds, these components are the ones you can count on for reliable performance. Their excellent thermal properties and fast intrinsic body diode ensure smooth, efficient operation in the most challenging conditions, making them a must-have for critical power systems.
[1200V MOSFET with SiC technology](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW040N120H4)
##### Features & Benefits:
- High-power capability: 1200V MOSFET with SiC technology
- Fast, reliable switching: Intrinsic body diode improves efficiency & ruggedness
- Enhanced performance: High switching speed with low gate charge
- Wide on-resistance selection: ranging from 21mΩ to 120mΩ (typ.)
- Efficiency: Superior thermal properties and low switching losses
- Durability: Avalanche ruggedness
- Versatility: TO247 3-pin and 4-pin package options
[SICW040N120H4](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW040N120H4)
[SICW040N120H](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW040N120H)
[SICW080N120H4](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW080N120H4)
[SICW021N120P4](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW021N120P4)
[SICW080N120H](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW080N120H)
[SICW021N120P](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW021N120P)
[SICW025N120H4](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW025N120H4)
[SICW120N120H4](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW120N120H4)
[SICW025N120H](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW025N120H)
[SICW120N120H](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW120N120H)
[Download Flyer](https://solutions.mccsemi.com/hubfs/MCC%20Amplifies%20Performance%20with%201200V%20SiC%20MOSFETs%20in%20TO-247%20Packages%20-%20mcc%20semi%20-%20micro%20commercial%20components.pdf)
## Product Highlights
Engineered with the perfect combination of efficiency and ruggedness, our new SiC MOSFETs deliver the performance required for seamless operation in high-power, high-voltage applications.
1200V High-Power SiC MOSFETs in TO-247 Packages
### 1
###### Enhanced Efficiency
With low switching losses and high switching speeds thanks to the fast intrinsic body diode, our SiC MOSFETs improve overall system efficiency, reducing energy consumption and lowering operational costs.
1200V High-Power SiC MOSFETs in TO-247 Packages
### 2
###### Superior Thermal Management
Excellent thermal stability ensures these components deliver reliable performance even under high-power conditions, minimizing the risk of overheating and extending the lifespan of the device.
1200V High-Power SiC MOSFETs in TO-247 Packages
### 3
###### Versatile Application
A wide range of on-resistance options allows for flexibility in design, assuring these MOSFETs are suitable for a variety of applications — from renewable energy systems to industrial motor drives.
1200V High-Power SiC MOSFETs in TO-247 Packages
### 4
###### Durability and Reliability
Their avalanche ruggedness feature provides additional protection against voltage spikes, ensuring long-term reliability while reducing maintenance in critical applications.
## Applications
MCC Semi’s new 1200V SiC MOSFETs are designed to assure ultimate performance and reliability in demanding environments, making them ideal for the following applications:
|  | .png?width=367&height=220&name=_Renewable%20energy%20systems%20-%20micro%20commercial%20components%20-%20mcc%20semi%20(500%20x%20300%20px).png) |  |
| --- | --- | --- |
| **Industrial ** | **Energy ** | **UPS and Data Centers ** |
| - Motor drives - Welding equipment - Power supplies | - Renewable energy systems - Charging infrastructure | - Uninterruptible power supply (UPS) systems - Cloud systems |
## Product Attributes, Parametrics & Datasheets
| Product | Type | Package | Drain-Source Voltage (VDS) | Continuous Drain Current (ID) | Typ. Drain- Source On-Resistance RDS(ON) | Mounting Type | Datasheet |
| --- | --- | --- | --- | --- | --- | --- | --- |
| [SICW040N120H4](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW040N120H4) | SiC MOSFET | TO-247-4 | 1200V | 62A | 40mΩ | Through-Hole | [Info](https://www.mccsemi.com/pdf/products/SICW040N120H4(TO-247-4).pdf) |
| [SICW040N120H](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW040N120H) | SiC MOSFET | TO-247AB | 1200V | 62A | 40mΩ | Through-Hole | [Info](https://www.mccsemi.com/pdf/products/SICW040N120H(TO-247AB).pdf) |
| [SICW080N120H4](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW080N120H4) | SiC MOSFET | TO-247-4 | 1200V | 33A | 80mΩ | Through-Hole | [Info](https://www.mccsemi.com/pdf/products/SICW080N120H4(TO-247-4).pdf) |
| [SICW021N120P4](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW021N120P4) | SiC MOSFET | TO-247-4L | 1200V | 100A | 21mΩ | Through-Hole | [Info](https://www.mccsemi.com/pdf/products/SICW021N120P4(TO-247-4L).pdf) |
| [SICW080N120H](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW080N120H) | SiC MOSFET | TO-247AB | 1200V | 33A | 80mΩ | Through-Hole | [Info](https://www.mccsemi.com/pdf/products/SICW080N120H(TO-247AB).pdf) |
| [SICW021N120P](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW021N120P) | SiC MOSFET | TO-247AB | 1200V | 100A | 21mΩ | Through-Hole | [Info](https://www.mccsemi.com/pdf/products/SICW021N120P(TO-247AB).pdf) |
| [SICW025N120H4](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW025N120H4) | SiC MOSFET | TO-247-4 | 1200V | 86A | 25mΩ | Through-Hole | [Info](https://www.mccsemi.com/pdf/products/SICW025N120H4(TO-247-4).pdf) |
| [SICW120N120H4](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW120N120H4) | SiC MOSFET | TO-247-4 | 1200V | 24A | 120mΩ | Through-Hole | [Info](https://www.mccsemi.com/pdf/products/SICW120N120H4(TO-247-4).pdf) |
| [SICW025N120H](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW025N120H) | SiC MOSFET | TO-247AB | 1200V | 86A | 25mΩ | Through-Hole | [Info](https://www.mccsemi.com/pdf/products/SICW025N120H(TO-247AB).pdf) |
| [SICW120N120H](https://www.mccsemi.com/products/MOSFETs/SIC%20MOSFETS/SICW025N120H) | SiC MOSFET | TO-247AB | 1200V | 24A | 120mΩ | Through-Hole | [Info](https://www.mccsemi.com/pdf/products/SICW120N120H(TO-247AB).pdf) |
###### **Use the [MCC website chatbot](https://solutions.mccsemi.com/news/mcc-amplifies-performance-with-1200v-sic-mosfets-in-to-247-packages#hs-chat-open) to quickly request a sample or ask a question.**
###### Tags:
[New Product Introductions,](https://solutions.mccsemi.com/news/tag/new-product-introductions) [News,](https://solutions.mccsemi.com/news/tag/news) [Industrial,](https://solutions.mccsemi.com/news/tag/industrial) [Computing,](https://solutions.mccsemi.com/news/tag/computing) [Silicon Carbide,](https://solutions.mccsemi.com/news/tag/silicon-carbide) [MOSFETs](https://solutions.mccsemi.com/news/tag/mosfets)
#### Related Content
[](https://solutions.mccsemi.com/news/mcc-introduces-high-efficiency-1200v-gen4-sic-schottky-diodes-for-automotive-power-systems)
February 24, 2026
#### [MCC Introduces High-Efficiency 1200V Gen4 SiC Schottky Diodes for Automotive Power Systems](https://solutions.mccsemi.com/news/mcc-introduces-high-efficiency-1200v-gen4-sic-schottky-diodes-for-automotive-power-systems)
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#### [MCC Introduces 1200V Gen6 SiC Schottky Diode in TO-247AD for High-Power Rectification](https://solutions.mccsemi.com/news/mcc-introduces-1200v-gen6-sic-schottky-diode-in-to-247ad-for-high-power-rectification)
[](https://solutions.mccsemi.com/news/unlock-high-frequency-efficiency-with-mccs-advanced-1200v-sic-diode)
November 10, 2025
#### [Unlock High-Frequency Efficiency with MCC’s Advanced 1200V SiC Schottky Barrier Rectifier](https://solutions.mccsemi.com/news/unlock-high-frequency-efficiency-with-mccs-advanced-1200v-sic-diode)
[](https://solutions.mccsemi.com/news/mcc-introduces-650v-1200v-gen4-sic-schottky-barrier-rectifiers)
March 25, 2026
#### [MCC Introduces 650V–1200V Gen4 SiC Schottky Barrier Rectifiers](https://solutions.mccsemi.com/news/mcc-introduces-650v-1200v-gen4-sic-schottky-barrier-rectifiers)
.png?width=50&height=50&name=mcc%20150x150%20(1).png)
Post by [MCC](https://solutions.mccsemi.com/news/author/mcc)
July 26, 2024
MCC is a leading integrated device manufacturer (IDM) of discrete semiconductors worldwide. Headquartered in the US, we deliver supply chain assurance, best-in-class support, and a diverse portfolio of 10,000+ advanced components to help customers innovate in automotive, industrial, and beyond.
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