With low switching losses and high switching speeds thanks to the fast intrinsic body diode, our SiC MOSFETs improve overall system efficiency, reducing energy consumption and lowering operational costs.

Excellent thermal stability ensures these components deliver reliable performance even under high-power conditions, minimizing the risk of overheating and extending the lifespan of the device.

A wide range of on-resistance options allows for flexibility in design, assuring these MOSFETs  are suitable for a variety of applications — from renewable energy systems to industrial motor drives.

Their avalanche ruggedness feature provides additional protection against voltage spikes, ensuring long-term reliability while reducing maintenance in critical applications.