Powerful Performance in Compact DFN1006-3 Package
Advanced operation meets ESD protection in MCC’s new small signal MOSFET. Housed in an ultra-compact DFN1006-3 package, the 30V MC3541KL3 is specifically engineered to deliver a cost-effective solution for space-constrained applications.
In addition to conserving real estate on the board, the leadless plastic package improves thermal performance. This component also features an ESD HBM Class 1C rating, ensuring exceptional shielding from electrostatic discharge.
Its low gate threshold voltage of 0.8V enables direct control by low-power logic circuits, boosting efficiency and design flexibility.
A low gate leakage and minimal input capacitance ensure efficient operation across diverse applications — from load switching and relay driving to small signal amplification and various switching circuits.
The ultimate component for innovating where space is limited, MC3541KL3 empowers engineers to design compact electronics without compromising performance.
Features & Benefits:
- ESD HBM Class 1C Rating: Safeguards against electrostatic discharge, ensuring reliable operation in sensitive environments.
- Leadless, Ultra-Small Plastic Package: Enables compact designs with a DFN1006-3 package measuring only 1.0 mm x 0.6 mm x 0.5 mm.
- Low Threshold Voltage (Vth) Facilitates operation with low-power logic, increasing versatility in circuit design.
- Low Gate Leakage and Input Capacitance: Reduce power losses while improving switching.
Product Highlights
From integrated ESD protection to a compact package, MCC’s small signal MOSFET boasts the features required for designs where space is limited, and efficiency is critical.
30V Small Signal MOSFET with Built-In ESD Diode
1
Space-Saving Design
The ultra-compact DFN1006-3 package enables high-density circuit designs that are optimal for applications with limited space, such as portable electronics and IoT devices.
30V Small Signal MOSFET with Built-In ESD Diode
2
Enhanced Reliability
Our MOSFET’s impressive ESD HBM Class 1C rating ensures superior protection against electrostatic discharge, enhancing the overall reliability and lifespan of electronics.
30V Small Signal MOSFET with Built-In ESD Diode
3
Improved Efficiency
With a low threshold voltage and minimal gate leakage for reduced power consumption, this new MOSFET is an intelligent choice for battery-operated devices and energy-efficient designs.
30V Small Signal MOSFET with Built-In ESD Diode
4
Application Versatility
Capable of handling low-power, low-current, and signal-switching tasks, our 30V MOSFET is suitable for a broad range of applications, including signal routing, power management, and relay drivers.
Applications
Our new 30V MOSFET provides unquestionable performance and built-in protection from ESD, making it ideal for various consumer electronics, communications, and industrial systems, including:
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Consumer Electronics |
IoT Devices |
Industrial Automation |
Communications |
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Product Attributes, Parametrics & Datasheet
Product |
Type |
Package |
Drain-Source |
Gate Threshold |
Mounting Type |
Datasheet |
Small Signal MOSFET |
DFN1006-3 |
30V |
0.8V |
Surface-Mount (SMD) |
Contact MCC to request a sample or ask a question.
For additional insights, explore our essential guide to MOSFET functions and features..