MCC introduces the MCAC3D0P03L, a 30 V P-Channel MOSFET designed to address the challenges of high-side switching in compact, high-efficiency power systems. Leveraging advanced Trench LV technology, this device achieves a low RDS(on) of just 3.0 mΩ (max at VGS = -10 V), minimizing conduction and switching losses to maintain high efficiency under demanding load conditions. 

The space-saving DFN5060 package features an exposed thermal pad and a low junction-to-case thermal resistance (RθJC = 0.82°C/W), enabling effective heat transfer to the PCB and supporting stable high-current operation with proper layout and thermal design. 

As a true high-side P-Channel MOSFET, the MCAC3D0P03L can eliminate the need for a dedicated high-side driver, simplifying load switches, OR-ing circuits, and hot-swap designs while conserving board space. Its 30 V drain-source rating provides ample margin for 12 V rails and transient events commonly found in server, storage, networking, BMS, and industrial systems. 

Optimized gate charge and capacitance support fast, clean switching with reduced EMI and simplified driver requirements. With robust electrical and thermal ratings, tape-and-reel packaging, and a compact footprint, this device is ready for integration into space-constrained, high-performance power designs.