MCC introduces the MCTL1D0N08Y, a high-performance 80 V N‑Channel MOSFET in a compact TOLL‑8L package, designed to tackle heat, efficiency, and size challenges in high-current, fast-switching power stages. With an ultra‑low RDS(on) of 1.0 mΩ at Vgs = 10 V and a continuous drain current of 320 A, it significantly reduces conduction losses and supports demanding applications. The split‑gate trench architecture and low-parasitic layout enable fast, clean switching transitions that minimize EMI and switching losses. 

Compared to legacy D2PAK solutions, the TOLL‑8L package shortens current paths and improves thermal flow, allowing for higher switching frequencies, smaller magnetics and heatsinks, and more compact, reliable designs. An 80 V VDS rating provides transient headroom for telecom, data center, and industrial environments, while robust thermal performance (RθJA ≈ 40°C/W, Tj(max) = 175°C) ensures stable operation under high ambient temperatures and continuous load. The result is a high-density, high-efficiency MOSFET that enhances uptime and shrinks power stages across SMPS, high-current DC-DC converters, industrial motor drives, and energy storage inverters.