Efficiency and Space Savings in a DFN3333-8 Package with Side-Wettable Flanks
Introducing MCC’s MCGWF085P10-TP, a 100V P-Channel MOSFET engineered to deliver high performance in compact power systems. Designed with advanced trench MV technology and high-density cell architecture, this device achieves an RDS(on) of just 85mΩ, reducing conduction losses for efficient operation.
Its DFN3333-8 package (3.3mm x 3.3mm) with Side-Wettable Flanks (SWF) supports reliable solder joints and streamlined automated optical inspection (AOI), enhancing assembly quality and production yield. The MCGWF085P10-TP also offers excellent thermal performance and a total gate charge of 44.4nC, making it well-suited for fast switching in high-frequency applications.
For engineers managing tight space constraints and demanding thermal conditions, this compact P-Channel MOSFET offers a balanced solution of efficiency, reliability, and design flexibility.
Features & Benefits:
- Trench MV Technology: Supports high efficiency with improved current handling.
- Low RDS(on): 85mΩ minimizes power loss, enabling energy savings.
- High-Density Cell Design: Enhances overall electrical performance.
- Side-Wettable Flanks (SWF): Ensure reliable solder joints and enable AOI inspection.
- Compact DFN3333-8 Package: 3.3mm x 3.3mm footprint saves board space in dense layouts.
- Excellent Thermal Performance: Supports stable operation under high-power conditions.
- Fast Switching: Low total gate charge (44.4nC) for efficient high-frequency operation.
Product Highlights
MCC’s new 100V P-Channel MOSFET combines efficient performance and compact design in a DFN3333-8 package with side-wettable flanks. Its low RDS(on), excellent thermal performance, and fast switching characteristics make it a strong choice for high-density, power-sensitive designs across industrial, consumer, and power management applications.
100V P-Channel MOSFET: Compact Power and Low RDS(on)
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Efficient Operation
MCGWF085P10-TP’s low RDS(on) of 85mΩ reduces conduction losses and supports optimal energy use in power-sensitive applications.
100V P-Channel MOSFET: Compact Power and Low RDS(on)
2
Manufacturing Reliability
Side-wettable flanks enable precise AOI and strong solder joints, improving manufacturing consistency.
100V P-Channel MOSFET: Compact Power and Low RDS(on)
3
Compact Design
The small 3.3mm x 3.3mm DFN3333-8 package is ideal for space-constrained boards and high-density layouts.
100V P-Channel MOSFET: Compact Power and Low RDS(on)
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Thermal Stability
Robust thermal performance ensures reliable function even under demanding power loads and elevated temperatures.
Applications
This 100V P-Channel MOSFET is built for efficient and reliable power switching across a wide range of industries and applications:
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Power Management |
Industrial Automation |
Consumer Electronics |
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Product Attributes, Parametrics & Datasheet
Product |
Type |
Package |
Drain-Source |
Drain-Source |
Mounting Type |
Datasheet |
P-Channel Power MOSFET |
DFN3333-8(SWF) |
100V |
85mΩ |
Surface-Mount (SMD) |
Contact MCC to request a sample or ask a question.
For a deeper dive into MOSFET applications and design considerations, get our essential guide.