Integrated Complementary Switching in a Compact DFN3333-D Package

MCC introduces the MCGD115NP10L, a 100V dual N- and P-channel MOSFET in a compact DFN3333-D package, designed for space-constrained power systems that require efficient switching and simplified circuit design.

By integrating complementary N- and P-channel MOSFETs into a single device, this solution reduces component count and streamlines power stage layout while maintaining strong electrical performance. The integration is particularly effective in high-side and low-side switching configurations, where discrete MOSFET solutions increase footprint and routing complexity.

With a maximum N-channel RDS(on) of 115mΩ at VGS = 10V and up to 10A current capability, the device supports efficient switching and stable operation in applications such as DC-DC converters, load switches, motor drivers, and fast power control across consumer and industrial systems.

Built on Trench Power LV MOSFET technology, the device enables low conduction loss and reliable operation in high-density PCB layouts, supporting compact and thermally efficient system design.

Features & Benefits:
  • Dual N‑ and P‑channel MOSFET array enables complementary switching in a single compact device
  • Trench Power LV MOSFET technology
  • 100V drain‑source voltage (VDS) supports higher voltage power rails
  • Low N‑channel RDS(on) of 115mΩ (max) at VGS = 10V
  • Up to 10A current capability
  • Integrated design reduces component count and simplifies PCB layout
  • Compact DFN3333‑D package enables high‑density board designs
  • Side wettable flanks improve AOI inspection reliability and assembly quality
  • Strong thermal performance for stable operation in high-power designs

Product Highlights   

100V dual N- and P-channel MOSFET

1

Reduced Board Space
Integrated N- and P-channel MOSFETs reduce the need for discrete components, enabling more compact PCB layouts.  

100V dual N- and P-channel MOSFET

2

Improved Efficiency
Low RDS(on) minimizes conduction losses and supports better thermal performance under load.

100V dual N- and P-channel MOSFET

3

Simplified Design
 Complementary MOSFET integration reduces routing complexity and shortens development time.

100V dual N- and P-channel MOSFET

4

Flexible Power Architecture
 The 100V rating combined with dual-channel configuration supports a wide range of switching topologies and system requirements.

 

Applications  

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IoT applications - mcc semi - micro commercial components 500x300

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Consumer Electronics  

Industrial Systems  

Embedded & Compact Systems  

General Power Control  

  • DC-DC converters in portable and battery-powered devices
  • Load switching and power sequencing in smartphones, wearables, and smart home products
  • Power management in industrial controllers and instrumentation
  • Motor drivers for fans, pumps, and automation equipment
  • High-density power management in space-constrained designs
  • IoT devices, edge computing, and communication modules
  • Load switching and protection in distributed power architectures
  • High-speed power control in consumer and industrial electronics

 

Product Attributes, Parametrics & Datasheet

Product

Type

Package

Channel

 Number of Functions 

Drain-Source
Voltage
VDS (V)

Gate-Source
Voltage
VGS (V)

Drain
Current
ID (A)

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)

Datasheet

MCGD115NP10L

Power MOSFET

 DFN3333-D   

N+P

 Dual

100/-10

±20

10/-5.5

 0.115/0.325

Info

 

Now available, purchase directly from MCC or through our authorized distributors. 

For technical inquiries or sample requests, contact MCC for support.

 

MCC
Post by MCC
April 16, 2026
MCC is a leading integrated device manufacturer (IDM) of discrete semiconductors worldwide. Headquartered in the US, we deliver supply chain assurance, best-in-class support, and a diverse portfolio of 10,000+ advanced components to help customers innovate in automotive, industrial, and beyond.