Ultra-Low 0.018Ω RDS(on), 40A Performance in DFN3333-8(SWF) Package
MCC introduces the MCGWF018N10YLQ, a compact 100V N-channel MOSFET designed for efficient power switching in space-constrained designs. Engineered to balance low loss, high current capability, and reliable thermal performance, the device combines ultra-low on-resistance with strong current handling in a DFN3333-8 (SWF) package, helping reduce heat generation while maintaining a compact footprint.
The MOSFET supports up to 40A continuous drain current with a maximum RDS(on) of 0.018Ω at VGS = 10V, enabling efficient operation under heavy load conditions. Built on split-gate trench technology, it reduces switching losses and maintains low on-resistance across both standard and logic-level gate drive conditions, providing flexibility across a wide range of power designs.
A 100V drain-source rating provides design margin for moderate-voltage applications, while the DFN3333-8 (SWF) package enhances heat dissipation and supports automated optical inspection through side wettable flanks, improving manufacturing reliability and yield.
AEC-Q101 qualified, the MCGWF018N10YLQ is designed for consistent performance in demanding environments, making it well suited for compact, high-power designs across consumer, industrial, telecom, and automotive applications.
Features & Benefits:
- 100V N-Channel MOSFET designed for moderate-voltage power switching applications
- Ultra-low RDS(on) of 0.018Ω (max) at VGS = 10V to minimize conduction losses
- Low RDS(on) of 0.023Ω (max) at VGS = 4.5V, supporting logic-level gate drive
- 40A continuous drain current for strong current handling capability
- Advanced split gate trench MOSFET technology for low switching losses and high efficiency
- AEC-Q101 qualified for automotive-grade reliability
- Compact DFN3333-8(SWF) surface-mount package for high-density PCB layouts
- Side wettable flanks improve AOI inspection reliability and assembly quality
- Strong thermal performance for stable operation in high-power designs
Product Highlights
100V N-Channel MOSFET
1
High Power Efficiency
100V N-Channel MOSFET
2
Automotive-Grade Reliability
100V N-Channel MOSFET
3
Flexible Gate Drive Compatibility
100V N-Channel MOSFET
4
Compact and Manufacturing-Optimized Design
Applications
The MCGWF018N10YLQ supports a wide range of power switching applications where efficiency, space, and reliability are critical.
|
|
|
|
|
|
Consumer Electronics
|
Industrial Systems
|
Telecommunications and Data Infrastructure |
Automotive |
|
|
|
|
Product Attributes, Parametrics & Datasheet
|
Product |
Type |
Package |
Channel |
Number of Functions |
Drain-Source |
Gate-Source |
Drain |
Drain-Source |
Datasheet |
|
Power MOSFET |
DFN3333-8(SWF) |
N |
Single |
100 |
±20 |
40 |
0.018 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.







