28mΩ On‑Resistance and 10A Drive Capability in a 2.0 × 2.0 mm DFN2020‑6LE Package

MCC introduces the MCM028N03YU, a high‑performance N‑Channel MOSFET developed for engineers designing power and signal switching circuits under tight space and thermal constraints. Packaged in a DFN2020‑6LE footprint of only 2.0 × 2.0 mm, it delivers low conduction loss, fast switching behavior, and robust current handling for densely populated commercial and consumer PCBs. 

The device features a maximum RDS(on) of 28mΩ and supports up to 10A continuous drain current, reducing power dissipation while maintaining reliable operation on 5V and 12V rails. Split‑gate trench MOSFET technology enables efficient switching, and a low 0.7V gate threshold allows direct drive from microcontrollers and low‑voltage logic, simplifying gate drive design and minimizing external component requirements in high‑density layouts. 

Features & Benefits:
  • Ultra‑compact DFN2020‑6LE package with a footprint of 2.0 mm × 2.0 mm, ideal for high‑density and space‑constrained PCB designs
  • Low RDS(on) of 28mΩ (max) at VGS = 10V for reduced conduction losses and improved system efficiency
  • 30V drain‑source voltage (VDS) suitable for 5V and 12V power rails
  • 10A continuous drain current capability for reliable load and signal switching
  • Split‑Gate Trench MOSFET technology optimized for low on‑resistance and fast switching performance
  • Low gate threshold voltage of 0.7V, enabling direct control from low‑voltage microcontrollers and logic circuits

Product Highlights   

High‑performance N‑Channel MOSFET

1

Space Savings

The ultra‑compact DFN2020‑6LE package (2.0 × 2.0 mm) allows designers to achieve higher PCB density and reduce overall product size in space‑constrained applications.

High‑performance N‑Channel MOSFET

2

Lower Power Loss

A low 28mΩ maximum RDS(on) reduces conduction losses and heat generation, helping maintain efficient operation and improved thermal performance.

High‑performance N‑Channel MOSFET

3

Simplified Control

The low 0.7V gate threshold voltage enables direct drive from microcontrollers and low‑voltage logic, reducing the need for additional gate‑drive circuitry.

High‑performance N‑Channel MOSFET

4

Reliable Performance

With a 30V drain‑source rating and 10A continuous current capability, the MOSFET provides solid electrical margins and dependable switching across common low‑voltage power rails.

 

Applications

audio amplifiers application - mcc semi - micro commercial components 500x300 networking devices - mcc semi - micro commercial components brake switch circuits - applications - mcc semi - micro commercial components 500x300

Portable Consumer Electronics  

Computing & Data Infrastructure 

Industrial & Embedded Systems

  •  AC and DC servo drive amplifiers 

  • Motion and servo control systems

  • High‑density PCB designs for motherboards

  • Networking equipment 

  • Signal level translation

  • Control and interface circuits on compact embedded boards 

 

 

Product Attributes, Parametrics & Datasheet

Product

Type

Package

Numbers of functions 

Channel 

Drain-Source 
Voltage 
VDS (V) 

Gate-Source 
Voltage 
VGS (V) xx
 

Drain 
Current 
ID (A)  

RDS(ON) 
Max 
@VGS=4.5V 
(Ω)  

Datasheet

MCM028N03YU

Small Signal MOSFET 

DFN2020-6LE 

Single 

30 

±12 

10 

0.028 

Info

 

Now available, purchase directly from MCC or through our authorized distributors.   

For technical inquiries or sample requests, contact MCC for support. 

For a deeper dive into MOSFET diode applications and best practices, check out our Essential Guide to 40V MOSFET Functions & Features,  a detailed resource that goes from the basics to an in-depth look at 40V options, and practical design insights.  

 

MCC
Post by MCC
January 15, 2026
MCC is a leading integrated device manufacturer (IDM) of discrete semiconductors worldwide. Headquartered in the US, we deliver supply chain assurance, best-in-class support, and a diverse portfolio of 10,000+ advanced components to help customers innovate in automotive, industrial, and beyond.