28mΩ On‑Resistance and 10A Drive Capability in a 2.0 × 2.0 mm DFN2020‑6LE Package
MCC introduces the MCM028N03YU, a high‑performance N‑Channel MOSFET developed for engineers designing power and signal switching circuits under tight space and thermal constraints. Packaged in a DFN2020‑6LE footprint of only 2.0 × 2.0 mm, it delivers low conduction loss, fast switching behavior, and robust current handling for densely populated commercial and consumer PCBs.
The device features a maximum RDS(on) of 28mΩ and supports up to 10A continuous drain current, reducing power dissipation while maintaining reliable operation on 5V and 12V rails. Split‑gate trench MOSFET technology enables efficient switching, and a low 0.7V gate threshold allows direct drive from microcontrollers and low‑voltage logic, simplifying gate drive design and minimizing external component requirements in high‑density layouts.
Features & Benefits:
- Ultra‑compact DFN2020‑6LE package with a footprint of 2.0 mm × 2.0 mm, ideal for high‑density and space‑constrained PCB designs
- Low RDS(on) of 28mΩ (max) at VGS = 10V for reduced conduction losses and improved system efficiency
- 30V drain‑source voltage (VDS) suitable for 5V and 12V power rails
- 10A continuous drain current capability for reliable load and signal switching
- Split‑Gate Trench MOSFET technology optimized for low on‑resistance and fast switching performance
- Low gate threshold voltage of 0.7V, enabling direct control from low‑voltage microcontrollers and logic circuits
Product Highlights
High‑performance N‑Channel MOSFET
1
Space Savings
The ultra‑compact DFN2020‑6LE package (2.0 × 2.0 mm) allows designers to achieve higher PCB density and reduce overall product size in space‑constrained applications.
High‑performance N‑Channel MOSFET
2
Lower Power Loss
A low 28mΩ maximum RDS(on) reduces conduction losses and heat generation, helping maintain efficient operation and improved thermal performance.
High‑performance N‑Channel MOSFET
3
Simplified Control
The low 0.7V gate threshold voltage enables direct drive from microcontrollers and low‑voltage logic, reducing the need for additional gate‑drive circuitry.
High‑performance N‑Channel MOSFET
4
Reliable Performance
With a 30V drain‑source rating and 10A continuous current capability, the MOSFET provides solid electrical margins and dependable switching across common low‑voltage power rails.
Applications
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Portable Consumer Electronics |
Computing & Data Infrastructure |
Industrial & Embedded Systems |
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Product Attributes, Parametrics & Datasheet
|
Product |
Type |
Package |
Numbers of functions |
Channel |
Drain-Source |
Gate-Source |
Drain |
RDS(ON) |
Datasheet |
|
Small Signal MOSFET |
DFN2020-6LE |
Single |
N |
30 |
±12 |
10 |
0.028 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.
For a deeper dive into MOSFET diode applications and best practices, check out our Essential Guide to 40V MOSFET Functions & Features, a detailed resource that goes from the basics to an in-depth look at 40V options, and practical design insights.






