Compact DFN5060 Package for High-Current, Space-Constrained Power Designs

MCC introduces a 40V N-channel MOSFET (MCAC2D6N04Y) in a compact DFN5060 package, engineered for designs where efficiency, power density, and board space are equally critical. Featuring an ultra-low RDS(on) of 2.6 mΩ (VGS = 10 V) and a high 166 A continuous drain current rating, this device minimizes conduction losses and heat generation, allowing designers to deliver more power in a smaller footprint while easing thermal design. Its combination of very low on-resistance, fast and efficient switching, and small package size makes it an ideal solution for battery protection circuits, compact DC-DC converters, motor drive stages, and other space-constrained power systems. 

With its Split Gate Trench structure delivering low gate charge (Qg = 38.3 nC) and fast switching, the MCAC2D6N04Y-TP is well suited for high-frequency power stages where switching losses and EMI must be tightly controlled. The device’s 175 °C maximum junction temperature provides solid headroom for demanding load conditions, reducing the need for heavy heatsinking and lowering overall thermal overhead. 

Features & Benefits:
  • Ultra-low RDS(on) of 2.6 mΩ (max) at VGS =10V, minimizing conduction losses to extend battery life and boost overall system efficiency
  • Split Gate Trench technology optimized for low gate charge (Qg = 38.3 nC) and high switching speed, enabling efficient
  • High continuous drain current (ID) rating of 166 A, delivering robust power handling in demanding power designs
  • High maximum junction temperature of 175 °C, improving device ruggedness and relaxing cooling and thermal management requirements
  • Compact DFN5060 package (5.0 mm × 6.0 mm), reducing board space while supporting high power density layouts
  • RoHS compliant and halogen-free, meeting global environmental and regulatory standards

Product Highlights   

40 V N-Channel MOSFET

1

High Power Density in Limited Space

Ultra-low RDS(on) of 2.6 and a compact 5.0 mm × 6.0 mm DFN5060 package support higher current handling in a small footprint, enabling more power-dense and space-efficient designs. 

40 V N-Channel MOSFET

2

Improved System and Thermal Performance

Low conduction losses and the ability to operate up to 175 °C help reduce heat generation and cooling requirements, simplifying thermal management and potentially lowering system cost

40 V N-Channel MOSFET

3

Fast, Efficient Switching

Split Gate Trench technology with low gate charge (Qg = 38.3 nC) supports high switching frequencies, reducing switching losses and allowing smaller passive components in DC-DC converters and power stages.

40 V N-Channel MOSFET

4

Robust, Reliable Operation and Compliance

A high continuous drain current rating of 166 A provides strong margin for demanding loads, while RoHS-compliant, halogen-free construction helps meet global environmental and regulatory requirements. 

Applications

 

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Power Tools & Energy Storage

Telecom, Networking & Data Infrastructure

Industrial & Motor Control 

Power Management, ORing & Load Switching 

Consumer, Computing & Embedded Systems  

  • Battery protection in cordless tools like drills and saws 
  • Battery management in home and commercial energy storage systems  
  • High-current switching for lithium-ion packs in outdoor and garden equipment 
  • Pack-level MOSFETs for e-bikes, scooters, and other light electric vehicles 
  • DC-DC converters in telecom base stations and radio units 
  • Point-of-load converters for switches, routers, and optical network gear 
  • Bus converters and VRMs in data center and enterprise servers 
  • Power ORing for backup and redundancy in -48 V systems 
  • Hot-swap protection for line cards and rack-mounted systems 
  • Motor drive circuits for factory automation equipment 
  • BLDC and brushed motor controllers in robots and mobile robots (AGVs/AMRs) 
  • Power stages in industrial tools and handheld devices 
  • PWM motor control for HVAC systems, fans, and pump 
  • Power ORing in redundant power supplies 
  • Hot-swap and load-switching for backplanes and plug-in modules 
  • High-side and low-side load switching in distributed power systems 
  • Protection and power-path control in DC power panels 
  • DC-DC converters in set-top boxes, gateways, and home networking devices 
  • Power stages in gaming systems, compact PCs, and embedded boards 
  • Battery protection and power-path control in portable and prosumer electronics 

 

Product Attributes, Parametrics & Datasheet

Product

Type

Package

Drain-Source 
Voltage 
VDS (V)   
 

Drain 
Current
ID (A) 
 

Drain-Source 
On-Resistance 
RDS(ON) 
Max 
@VGS=10V (Ω) 
 

Datasheet

MCAC2D6N04Y

Power MOSFET 

DFN5060

40

166

0.0026

Info

 

Now available, purchase directly from MCC or through our authorized distributors.  

For technical inquiries or sample requests, contact MCC for support.  

For a deeper dive into MOSFET applications and design considerations, get our essential guide.

 

 

MCC
Post by MCC
December 8, 2025
MCC is a leading integrated device manufacturer (IDM) of discrete semiconductors worldwide. Headquartered in the US, we deliver supply chain assurance, best-in-class support, and a diverse portfolio of 10,000+ advanced components to help customers innovate in automotive, industrial, and beyond.