Greater Gate Control and Low On-Resistance in a Compact DFN5060 Package
Simplify your designs and boost efficiency with MCC Semi’s new lineup of logic-level N-channel MOSFETs: 30V MCAC1D1N03YL, 40V MCAC1D4N04YL, and 60V MCAC2D7N06YL.
These components offer unique benefits for engineers looking to drive the MOSFETs directly by MCU through I/O ports. Some logic-level MOSFETs with a threshold voltage of 1V or less are too sensitive for certain applications, causing false triggers.
Our new logic-level MOSFETs are engineered with slightly higher VGS(th) values between 1.2V and 2.3V to help control sensitivity and ensure reliability. They also feature advanced split-gate trench (SGT) technology for enhanced thermal performance, and low RDS(on) values from 1.1mΩ to 2.7mΩ to minimize losses.
Their high power density DFN5060 package ensures suitability for compact design needs, while the logic-level gate threshold voltage enables direct drive from MCU I/O ports, reducing the need for additional components.
MCC’s logic-level MOSFETs solve design challenges while enhancing operation and efficiency in a range of applications.
Features & Benefits:
- SGT Technology: Enhances efficiency and performance
- Excellent Thermal Performance: Ensures stable operation under high power conditions
- Low RDS(on): Ranges from 1.1mΩ to 2.7mΩ, providing higher current capacity and reduced power losses
- High Power Density: DFN5060 package supports compact design needs
- Logic-Level Gate Threshold Voltage: Allows direct drive from MCU I/O ports, streamlining design
Product Highlights
Our new 30V-60V logic-level MOSFETs offer engineers the best of both worlds — a gate threshold voltage (VGH(th)) above 1V to minimize switching sensitivity and low RDS(on) to reduce power losses while carrying higher currents.
30V-60V Logic-Level N-Channel MOSFETs
1
Enhanced Efficiency
With low RDS(on) values ranging from 1.1mΩ to 2.7mΩ, these MOSFETs ensure higher current capacity and reduced power losses, leading to improved overall efficiency in your applications.
30V-60V Logic-Level N-Channel MOSFETs
2
Compact Design
The DFN5060 package offers high power density, making these MOSFETs suitable for compact and space-constrained designs, such as battery management systems and LED lighting.
30V-60V Logic-Level N-Channel MOSFETs
3
Direct MCU Drive
The logic-level gate threshold voltage enables these MOSFETs to be driven directly by MCU I/O ports, simplifying the design process and reducing the need for additional components.
30V-60V Logic-Level N-Channel MOSFETs
4
Improved Sensitivity Control
With gate threshold voltage (VGS(th)) options between 1.2V and 2.3V, our MOSFETs provide better control over sensitivity, preventing false triggers and ensuring reliable performance in various applications.
Applications
A compact package, greater control, and enhanced performance ensure our new logic-level MOSFETs optimize designs in a wide range of innovative products and applications, including:
Battery Management Systems (BMS) |
Lighting Controls |
Motor Drives |
DC-DC Converters |
Low-Side Switches |
Ideal for managing and protecting battery packs in cordless tools and other battery-operated devices.
|
Effective for controlling LED lighting systems, providing efficient power management and dimming capabilities. |
Reliable for various motor control systems in applications such as robotics, automation, and electric vehicles. |
Efficient power conversion for compact designs in portable electronics and other power-sensitive applications. |
Suitable for switching applications requiring low RDS(on), ensuring minimal power loss and efficient operation. |
Product Attributes, Parametrics & Datasheets
Product |
Type |
Package |
Drain-Source Voltage |
Drain- Source On-Resistance |
Gate-Threshold Voltage VGS(th) |
Mounting Type |
Datasheet |
N-Channel Power MOSFET |
DFN5060 |
30V |
1.1mΩ |
1.2V |
Surface-Mount (SMD) |
||
N-Channel Power MOSFET |
DFN5060 |
40V |
1.4mΩ |
1.3V |
Surface-Mount (SMD) |
||
N-Channel Power MOSFET |
DFN5060 |
60V |
2.7mΩ |
2.3V |
Surface-Mount (SMD) |
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