Offers Low 100 mΩ RDS(on) and Logic Level Gate in an SOT-23-3L Package
If you are working with limited board space and demanding voltage requirements, MCC’s SL100N10L delivers an extremely compelling solution. This 100V N-Channel MOSFET is housed in a compact SOT-23-3L package and built on MCC’s advanced Trench Power LV MOSFET technology, offering efficient switching performance in a footprint optimized for space-sensitive applications.
With a low RDS(on) of just 100mΩ and a 2A current rating, the SL100N10L is ideal for low-power switching tasks in IoT devices, battery protection circuits, and industrial signal control systems. Its logic-level gate drive simplifies integration with microcontrollers and low-voltage logic, making it a versatile choice for portable electronics and embedded systems.
Engineered for flexibility and efficiency, the SL100N10L will enable you to streamline layouts and reduce thermal stress in compact environments. Its small form factor and robust electrical characteristics make it a go-to component for modern electronics where space, power efficiency, and voltage tolerance are critical.
Features & Benefits:
- Trench Power LV MOSFET technology for low RDS(on) and fast switching
- 100 V drain source rating for ample voltage margin
- Logic level gate drive compatible with 3.3 V/5 V controllers
- Typical RDS(on) of 100 mΩ (at appropriate gate bias)
- Up to 2A continuous current handling
- Low gate charge for efficient, rapid switching
- Compact SOT-23-3L package for space constrained designs
Product Highlights
100V N-channel MOSFET
1
Enhanced Efficiency
Low RDS(on) and modest gate charge minimize conduction and switching losses, improving battery life and overall system efficiency.
100V N-channel MOSFET
2
Space-Saving Design
The compact SOT-23-3L footprint streamlines layouts and enables high-density boards in IoT and portable devices.
100V N-channel MOSFET
3
Easy Control Integration
Logic-level gate drive works directly with common 3.3 V/5 V microcontrollers, reducing driver complexity and component count.
100V N-channel MOSFET
4
Wide Voltage Margin
100 V drain-source rating supports robust operation in noisy or inductive environments, improving reliability for load switching and industrial signals.
Applications
The SL100N10L supports a wide range of applications that require efficient switching, compact size, and reliable high-voltage performance. Its logic-level drive and low on-resistance make it suitable for both battery-powered systems and industrial control environments.
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IoT & Embedded Systems |
Battery Management and Protection |
Industrial Automation and Control |
Industrial Automation and Control |
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Product Attributes, Parametrics & Datasheet
|
Product |
Type |
Package |
Channel |
Drain Source Voltage VDS(V) |
Gate-Source Voltage VGS (V) |
Drain |
RDS(ON) |
Datasheet |
|
Small Signal MOSFET |
SOT-23-3L |
N |
100 |
±20 |
2 |
0.1 |
Now available, purchase directly from MCC or through our authorized distributors.
For a deeper dive into MOSFET diode applications and best practices, check out our Essential Guide to 40V MOSFET Functions & Features, a detailed resource that goes from the basics to an in-depth look at 40V options, and practical design insights.
For technical inquiries or sample requests, contact MCC for support.







