Offers Low 100 mΩ RDS(on) and Logic Level Gate in an SOT233L Package
If you are working with limited board space and demanding voltage requirements, MCC’s SL100N10L-TP delivers an extremely compelling solution. This 100V N-Channel MOSFET is housed in a compact SOT-23-3L package and built on MCC’s advanced Trench Power LV MOSFET technology, offering efficient switching performance in a footprint optimized for space-sensitive applications.
With a low RDS(on) of just 100mΩ and a 2A current rating, the SL100N10L-TP is ideal for low-power switching tasks in IoT devices, battery protection circuits, and industrial signal control systems. Its logic-level gate drive simplifies integration with microcontrollers and low-voltage logic, making it a versatile choice for portable electronics and embedded systems.
Engineered for flexibility and efficiency, the SL100N10L-TP will enable you to streamline layouts and reduce thermal stress in compact environments. Its small form factor and robust electrical characteristics make it a go-to component for modern electronics where space, power efficiency, and voltage tolerance are critical.
Features & Benefits:
- Trench Power LV MOSFET technology for low RDS(on) and fast switching
- 100 V drain source rating for ample voltage margin
- Logic level gate drive compatible with 3.3 V/5 V controllers
- Typical RDS(on) of 100 mΩ (at appropriate gate bias)
- Up to 2 A continuous current handling
- Low gate charge for efficient, rapid switching
- Compact SOT233L package for space constrained designs
Product Highlights
100V N-channel MOSFET
1
Enhanced Efficiency
Low RDS(on) and modest gate charge minimize conduction and switching losses, improving battery life and overall system efficiency.
100V N-channel MOSFET
2
Space-Saving Design
The compact SOT-23-3L footprint streamlines layouts and enables high-density boards in IoT and portable devices.
100V N-channel MOSFET
3
Easy Control Integration
Logic-level gate drive works directly with common 3.3 V/5 V microcontrollers, reducing driver complexity and component count.
100V N-channel MOSFET
4
Wide Voltage Margin
100 V drain-source rating supports robust operation in noisy or inductive environments, improving reliability for load switching and industrial signals.
Applications
These super-fast recovery bridge rectifiers are well-suited for front-end AC rectification and high-speed switching stages where low loss, low EMI, and high surge capability are critical. Their 600 V VRRM rating, soft‑recovery behavior, and robust PB package make them a reliable fit across industrial, automotive, consumer, and infrastructure power systems.
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IoT & Embedded Systems |
Industrial and Automation |
Automotive |
Consumer Electronics |
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Product Attributes, Parametrics & Datasheet
|
Product |
Type |
Package |
Drain Source Voltage VDS(V) |
Gate-Source Voltage VGS (V) |
Datasheet |
|
Signal MOSFET |
SOT-23-3L |
100 |
±20 |
Now available, purchase directly from MCC or through our authorized distributors.
For a deeper dive into MOSFET diode applications and best practices, check out our Essential Guide to 40V MOSFET Functions & Features, a detailed resource that goes from the basics to an in-depth look at 40V options, and practical design insights.
For technical inquiries or sample requests, contact MCC for support.






