.png?width=50&height=50&name=mcc%20150x150%20(1).png)
Ultra-Low 5.2mΩ RDS(on) in a Compact DFN5060 Package
MCC's MCAC5D2N10Y-TP is a 100V N-Channel MOSFET that delivers breakthrough efficiency through advanced Split Gate Trench (SGT) technology, featuring a low RDS(on) of 5.2mΩ. The compact DFN5060 package combines superior thermal performance with space-saving design, enabling stable operation in power-dense applications. With optimized low gate charge and lower conduction losses, this solution is ideal for high-frequency DC-DC converters, motor drivers, and other demanding power systems where thermal management and efficiency are critical.
Features & Benefits:
- Split Gate Trench (SGT) Power MOSFET Technology for enhanced efficiency
- Low RDS(on) of 5.2mΩ for reduced conduction losses
- Low gate charge for fast switching and low drive requirements
- Compact DFN5060 package with an optimized footprint of 5.0mm x 6.0mm
- Low thermal resistance for improved heat dissipation and reliability
Applications
|
|
|
|
|
|
Power Management |
Industrial Automation |
Lighting |
Consumer Electronics |
|
|
|
|
Product Attributes, Parametrics & Datasheet
|
Product |
Type |
Package |
Drain Source Voltage VDS |
Drain Source On-Resistance (max.) RDS(on) |
Continuous Drain Current ID |
Total Power |
Mounting Type |
Datasheet |
|
Power MOSFET |
DFN5060 |
100V |
117V |
117A |
138W |
Surface Mount |
Use the MCC chatbot to quickly request a sample or ask a question.
