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Low RDS(on) and Integrated Fast Recovery Diode Boost Efficiency
Introducing the latest high-performers from MCC Semi: two 600V N-channel MOSFETs with superjunction (SJ) technology. Engineered for maximum efficiency, MSJPFR20N60 and MSJPFFR20N60 boast a low on-resistance of 193mΩ, ensuring minimal power losses. Their integrated fast recovery diode ensures rapid recovery times, dramatically optimizing overall switching performance and circuit reliability.
Superjunction MOSFET technology empowers these components to handle high currents while reducing thermal management needs due to minimal heat dissipation, enhancing efficient operation.
Available in isolated (TO-220F) and non-isolated (TO-220AB) packages, these MOSFETs are an excellent and seamless upgrade for existing designs, as well as new products.
For meeting the demands of modern electronics design in high-voltage switching applications, including power supplies, AC-DC converters, and motor drives, our new 600V SJ MOSFETs are the obvious solution.
Features & Benefits:
- Advanced superjunction (SJ) MOSFET technology reduces thermal management requirements
- Low on-resistance of 193mΩ enhances efficiency
- Low conduction losses due to minimal heat dissipation
- Low gate charge improves switching speed and efficiency
- Integrated fast recovery diode empowers high-speed switching
- Seamless integration with non-isolated TO-220AB and isolated TO-220F packages
Applications
Our new MOSFETs deliver reliable operation and superior current handling for applications where high-speed switching is crucial, including:
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Power Conversion |
Motor Controls |
High-Voltage Switching |
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Product Attributes, Parametrics & Datasheets
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Product |
Type |
Package |
Drain-Source |
Max. Drain-Source |
Mounting Type |
Datasheet |
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N-Channel Power MOSFET |
TO-220AB(H) |
600V |
193mΩ |
Through-hole |
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N-Channel Power MOSFET |
TO-220F |
600V |
193mΩ |
Through-hole |
Contact MCC to request a sample or ask a question.
