MCC introduces MCG360P15  a single‑channel P‑Channel MOSFET with a drain‑source voltage rating of −150 V (VDS) and a ±20 V gate‑source voltage (VGS), designed to address common design constraints in high‑voltage power circuits such as high‑side switching efficiency, thermal management, and PCB space limitations. With a low RDS(on) of 360 mΩ and a compact DFN3333 (3.3 mm × 3.3 mm) package, the device helps engineers reduce conduction losses while maintaining a small footprint. 

Built on trench MOSFET technology, the MOSFET delivers efficient current conduction and stable electrical performance under high‑voltage conditions. The thermally optimized DFN package supports effective heat dissipation, simplifying layout and improving reliability in high‑density designs for industrial, energy storage, and power conversion applications.