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Low RDS(on) with -14A Drain Current in DFN3333 Package
MCC is pleased to introduce our 100V P-channel MOSFET that optimizes space without sacrificing performance. Housed in a compact DFN3333 package, MCG085P10 utilizes innovative trench power LV MOSFET technology to maximize reliability and efficiency.
From its exceptionally low 85mΩ on-resistance that reduces voltage drops and heat generation to low conduction losses, this component is well-suited for diverse applications. Requiring lower gate drive voltages, our MOSFET ensures stable operation under harsh working conditions.
MCG085P10 also solves common challenges, including efficiency, heat management, and space constraints, offering engineers an edge in modern electronic design.
Features & Benefits:
- Trench Power LV MOSFET Technology: Enhances performance with reduced gate drive requirements and improved efficiency.
- Low On-Resistance: Boosts overall efficiency thanks to minimal voltage drop and heat generation during operation.
- Low Conduction Losses: Increases energy savings and improves thermal performance in power applications.
- Compact DFN3333 Package: Enables smaller, more innovative electronic designs.
Applications
This highly versatile P-channel MOSFET maintains optimal performance in a wide range of industries — from power management and renewable energy to consumer electronics and industrial automation.
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Power Management |
Renewable Energy |
Consumer Electronics |
Industrial Automation |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source |
Drain-Source |
Continuous |
Total Power |
Mounting Type |
Datasheet |
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P-Channel MOSFET |
DFN3333 |
-100V |
85mΩ |
-14A |
34.7W |
Surface-Mount (SMD) |
This advanced component is in stock and available for direct purchase.
For technical inquiries or sample requests, contact MCC for support.
For insights on 40V MOSFETs and their functions, check out our essential guide.
