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Efficient, Compact Design with Improved Thermal and Electrical Conductivity
MCC introduces its latest 60V MCG080N06LHE3 N-Channel MOSFET in the compact PDFN3333-B package. Designed for low-to-medium power applications, this device features an on-resistance of just 80mΩ and a larger drain pad that improves both electrical and thermal conductivity. The result is better heat dissipation and higher overall efficiency, especially in space-constrained environments.
Built with MCC’s trench MV technology and high-density cell design, the MOSFET provides consistent and reliable switching performance. Its AEC-Q101 qualification ensures durability and dependable operation in automotive and other high-reliability applications.
This compact, high-performance solution is well suited for engineers seeking a balance of efficiency, thermal management, and space-saving design.
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Features & Benefits:
- AEC-Q101 Qualified: Ensures reliability in automotive and harsh environments.
- Trench MV Technology: Supports high efficiency and performance.
- Low On-Resistance: RDS(on) of 80mΩ reduces conduction losses.
- Larger Drain Pad: Improves thermal conductivity and electrical performance.
- Compact Package: PDFN3333-B (3.3mm x 3.3mm) enables space-saving layouts.
Applications
This MOSFET offers flexible performance for a wide range of industries and use cases.
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Automotive |
Industrial |
Consumer Electronics |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source |
Drain-Source |
Mounting Type |
Datasheet |
|
N-Channel Power MOSFET |
PDFN3333-B |
60V |
80mΩ |
Surface-Mount (SMD) |
Contact MCC to request a sample or ask a question.
For a deeper dive into MOSFET applications and design considerations, get our essential guide.
