MCC's MCACL1D6N06YH Split Gate Trench technology delivers 1.6 mΩ RDS(on), 242A current in a PDFN compact package
MCC introduces the MCACL1D6N06YH, a 60V N-Channel Power MOSFET designed to address the dual challenges of high-current switching and thermal management in space-constrained industrial power systems. Packaged in a compact PDFN5060, the device combines ultra-low on-resistance with exceptional thermal performance to support efficient, high-density power conversion in demanding applications. Advanced Split Gate Trench technology enables both low conduction losses and effective switching performance in a thermally enhanced surface-mount package.
The MCACL1D6N06YH delivers a maximum RDS(on) of 1.6mΩ, minimizing power dissipation during high-current operation. With continuous drain current capability up to 242A, the device supports robust industrial motor drives, DC/DC converters, and power-distribution systems. The ultra-low junction-to-case thermal resistance of 0.81°C/W, combined with the PDFN5060's exposed pad design, provides efficient heat transfer for high-power applications in industrial automation, telecom power systems, BLDC motor drives, server power supplies, and robotics.
60V N-Channel Power MOSFET
Features & Benefits:
- 242A Continuous ID: Supports mid-voltage power-conversion and switching applications
- Low RDS(on) of 1.6mΩ: Supports reduced conduction loss
- Advanced Split Gate Trench MOSFET technology: Reduces switching losses while improving switching performance
- Total gate charge (Qg) of 84.2nC: Supports switching-performance optimization
- Low junction-to-case thermal resistance of 0.81°C/W: Enables efficient heat dissipation during high-power operation
Product Highlights
60V N-Channel Power MOSFET
1
Reduced Conduction Losses
The MCACL1D6N06YH features low RDS(on) of 1.6mΩ. This minimizes conduction losses during operation, improving overall power-conversion efficiency and reducing heat generation in high-current applications.
60V N-Channel Power MOSFET
2
High Current Capability
The device supports continuous drain current (ID) up to 252A, making it suitable for demanding high-power applications. Pulsed drain current (IDM) capability of 968A provides additional margin for transient high-current events. This current-handling capability, combined with 1104mJ single-pulse avalanche energy rating (EAS), supports robust power-stage designs.
60V N-Channel Power MOSFET
3
Compact Thermal Design
The PDFN5060 package provides a compact footprint while delivering effective thermal performance. With junction-to-case thermal resistance of just 0.81°C/W, the package enables efficient heat transfer to the PCB.
60V N-Channel Power MOSFET
4
Switching Performance
With a total gate charge of 84.2nC, the MCACL1D6N06YH optimizes switching-stage performance. Fast switching times, including 76.3ns rise time and 51.7ns fall time, enable efficient high-frequency operation and minimize switching losses in power-conversion designs.
Applications
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Industrial Power Systems
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Battery and Energy Storage
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Motor Drive & Traction
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Power Conversion
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Continuous Drain Current ID(A) | Drain-Source On-Resistance RDS(ON) Max @VGS=10V (mΩ) |
Total Gate Charge Qg (nC) | Datasheet |
| MCACL1D6N06YH | DFN5060-C | N-Channel |
60 |
±20 |
242 |
1.6 |
84.2 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.



