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Zero Reverse Recovery Current, Low 1.7V Forward Voltage, and 60A Surge Capability for High-Efficiency Industrial and Energy Applications
Micro Commercial Components (MCC) introduces the SIC1065G5M-BP, a high-efficiency 650V 10A Silicon Carbide (SiC) Schottky Barrier Diode designed for demanding power conversion applications. As modern power systems continue to increase switching frequencies while targeting higher efficiency and improved thermal performance, engineers require rectifier solutions that minimize switching losses without compromising reliability.
Built on advanced Merged PiN Schottky (MPS) technology, the SIC1065G5M-BP combines zero reverse recovery current, low 1.7V forward voltage, and 60A surge current capability in a compact TO-220AC package. Supporting junction temperatures up to 175°C, the device delivers outstanding efficiency and robust thermal performance for solar inverters, power factor correction (PFC), motor drives, and EV charging infrastructure.
650V Silicon Carbide Schottky Barrier Diode (SiC SBD)
Features & Benefits:
- 650V Reverse Voltage: Supports high-voltage power conversion with improved system efficiency
- Merged PiN Schottky (MPS) Technology: Reduces switching losses while delivering excellent surge capability
- Zero Reverse Recovery Current: Eliminates reverse recovery losses for higher switching efficiency
- Low Forward Voltage: Maximum VF of 1.7V minimizes conduction losses and improves power efficiency
- High Surge Current Capability: 60A IFSM enhances robustness against inrush and transient conditions
- High Junction Temperature: Supports operation up to 175°C for reliable performance in demanding environments
- TO-220AC Package: Standard package simplifies heatsink attachment and thermal management
- RoHS Compliant: Supports environmentally responsible electronic product design
Applications
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Industrial Power Systems
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Power Conversion
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Renewable Energy
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Telecom & Networking
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Consumer Electronics
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
VRRM (V) |
IF (A) |
VF [max] (V) |
IFSM(A) |
IR (µA) [max] |
Datasheet |
| SIC1065G5M-BP |
650 |
10 |
1.7 |
60 |
25 |
Now available, purchase directly from MCC or through our authorized distributors.
To learn more about selecting the right Silicon Carbide (SiC) Schottky Barrier Diode for your application, explore our Engineer's Guide to Choosing the Right SiC Schottky Diode. The guide covers key selection criteria, performance advantages, and practical design considerations for high-efficiency power conversion systems.
For technical inquiries or sample requests, contact MCC for support.
