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Improve Performance and Reduce System Size
Our Silicon Carbide MOSFETs are efficient and low-loss devices designed for high-frequency switching, high blocking voltage, and low on-resistance with avalanche capability.
Optimized for Vgs ranging from -4V to +18V (1200V) and -3V to +20V (1700V), these innovative components deliver the best performance when driven with maximum voltage. They also require a smaller heat sink thanks to their Rds(on) stability over temperature, which reduces overall component size and cost.
SICW1000N170A-BP
Features & Benefits:
- Optimized for higher switching frequency
- High blocking voltage with low on-resistance
- Stable on-resistance over temperature
- Reduced heat sink requirements
- Avalanche capability
- Enhanced overall system efficiency
- Reduced system size
- Improved power conversion efficiency
- Minimal power loss
- Cost-effective and compact design
- High voltage spike endurance without damage
Applications:
From high switching speed to low on-resistance and high blocking voltage, MCC’s Silicon Carbide MOSFETs provide superior characteristics for a range of high-voltage and high-power applications.
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| Industrial | Renewable | Communication |
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MCC’s SiC MOSFETs offer effective, dependable, and high-quality solutions for a broad spectrum of industrial, commercial, and scientific uses.
Product Attributes, Parametrics, Datasheet:
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Product |
Drain-Source Voltage VDS |
Gate-Source Voltage VGSmax |
Continuous Drain Current ID |
RDS(ON)
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VGS(th)
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Package Type |
Info/Data Sheets |
| SICW080N120Y4-BP | 1200V | -8/+22 | 38A | 85mΩ | 3.6V | TO-247-4 | Info |
| SICW1000N170A-BP | 1700V | -5/+25 | 3A | 1370mΩ | 4.5V | TO-247AB | Info |
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