Improve Performance and Reduce System Size

Our Silicon Carbide MOSFETs are efficient and low-loss devices designed for high-frequency switching, high blocking voltage, and low on-resistance with avalanche capability.

Optimized for Vgs ranging from -4V to +18V (1200V) and -3V to +20V (1700V), these innovative components deliver the best performance when driven with maximum voltage. They also require a smaller heat sink thanks to their Rds(on) stability over temperature, which reduces overall component size and cost.

SICW1000N170A TO-247AB - MCC NPI Q1


Features & Benefits:
  • Optimized for higher switching frequency
  • High blocking voltage with low on-resistance
  • Stable on-resistance over temperature
  • Reduced heat sink requirements
  • Avalanche capability
  • Enhanced overall system efficiency
  • Reduced system size
  • Improved power conversion efficiency
  • Minimal power loss
  • Cost-effective and compact design
  • High voltage spike endurance without damage

Reliable Performance for Various High-Power, High-Voltage Applications

1200V and 1700V SiC MOSFETs


Optimized for higher switching frequency

MCC's SiC solutions are designed to operate at a high switching frequency, allowing for faster switching and higher efficiency in power conversion applications.

1200V and 1700V SiC MOSFETs


High Blocking Voltage with low on-resistance

Our SiC MOSFETs have high blocking voltage compared to Silicon materials, making them ideal for high-voltage operation with lower power losses.

1200V and 1700V SiC MOSFETs


Stable on-resistance Over Temperature

On-resistance remains stable over a wide temperature range, ensuring consistent performance with lower switching losses, higher efficiency, and reduced need for additional cooling.

1200V and 1700V SiC MOSFETs


Avalanche Capability

These SiC MOSFETs can withstand high voltage spikes without damage, enhancing durability and reliability in demanding applications.


From high switching speed to low on-resistance and high blocking voltage, MCC’s Silicon Carbide MOSFETs provide superior characteristics for a range of high-voltage and high-power applications. 

Industrial Automation IGBT applications MCC Renewable Energy IGBT applications MCC Communication Application MCC
Industrial Renewable Communication
  • Industrial motor drives
  • Power supplies/uninterruptible power supplies (UPS)
  • Switched-mode power supplies (SMPS)
  • High-frequency power amplifiers
  • RF applications
  • Industrial heating and drying systems
  • Scientific research and testing equipment
  • Off-board chargers
  • Solar inverters
  • Energy storage systems (ESS)
  • Wind turbine converters
  • RF power amplifiers  in Satellite communication and radar systems
  • Server/telecom for high-speed (fiber-optic) transceivers


MCC’s SiC MOSFETs offer effective, dependable, and high-quality solutions for a broad spectrum of industrial, commercial, and scientific uses.

Product Attributes, Parametrics, Datasheet:


Drain-Source Voltage


Gate-Source Voltage


Continuous Drain Current






Package Type

Info/Data Sheets

SICW080N120Y4-BP 1200V -8/+22 38A 85mΩ 3.6V TO-247-4 Info
SICW1000N170A-BP 1700V -5/+25 3A 1370mΩ 4.5V TO-247AB Info


Use the MCC website chatbot to learn more or request a sample.


Post by MCC
March 21, 2023
MCC is a proven global leader in discrete semiconductor solutions. With best-in-class service, a strategic support network and growing portfolio of 10,000+ high-quality components, we help our customers innovate in automotive, industrial and beyond.